个人简介
2002.09—2006.07，合肥工业大学，理学院，本科/学士；
2006.09—2009.03，西安电子科技大学，微电子学院，研究生/硕士；戴显英教授；
2009.09—2012.03，西安电子科技大学，微电子学院，研究生/博士；张鹤鸣教授。
研究领域
1、基于深度学习的电学参数提取及优化算法研究
2、基于大数据在太阳电池性能提高中的应用
3、电路设计领域中的SPICE模型参数建模及可靠性算法分析
近期论文
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[1] Xiaobo Xu, Xiaocheng Zhang, Zhaowu Huang, Shaoyou Xie, Wenping Gu, Xiaoyan Wang, in Zhang and Zan Zhang Current Characteristics Estimation of Si PV Modules Based on Artificial Neural Network Modeling, Materials, 2019, 12(9), 3037(1)-3037(12) (SCI IF: 2.972).
[2] Wang Xiao-Yan, Xu Xiao-Bo, Wang Hui-Feng, Analytical model for uniaxial strained Si inversion layer electron effective mobility, IET Circuits, Devices & Systems, 2019, 13(3), 414-491 (SCI IF: 1.277).
[3] Wang Xiao-Yan, Xu Xiao-Bo, Wang Hui-Feng, An analytical model for the electron effective mobility in a strained silicon inversion layer, Chinese Journal of Physics, 2018, 56, 2095-2103 (SCI IF: 2.544).
[4] Lin Zhang, Hong-Liang Cheng, Xiao-Chuan Hu, Xiao-Bo Xu, Model and optimal design of 147Pm SiC-based betavoltaic cell, 2018, 123, 60-70 (SCI IF: 2.385 ) .
[5] Wenping Gu, Xiaobo Xu, Lin Zhang, Zhiyuan Gao, Xiaochuan Hu and Zan Zhang，Study on Neutron Irradiation-Induced Structural Defects of GaN-Based Heterostructures, 2018, 8, 198(1)-198(9).
[6] 徐小波，李瑞雪，全部耗尽SOI SiGe HBT 集电结渡越时间模型研究， 微电子学，2018， 48(4)，496-499.
[7] 李瑞雪，徐小波，谷文萍， 一种基于光强变化的太阳电池参数提取方法，电子器件，2019, 42(4), 856-860;
[8]Xiao-Bo Xu，Wen-Ping Gu, Si Quan, Zan Zhang, Lin Zhang. Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs. Superlattices and Microstructures, 2017. 603-609 ( SCI IF: 2.123).
[9]Xiao-Bo Xu，Xiao-Yan Wang, Wen-Ping Gu, Si Quan, Zan Zhang. Study on influences of CdZnS buffer layer on CdTe solar cells. Superlattices and Microstructures, 109, 2017, 463-469 ( SCI IF: 2.123)
[10]Xiaobo Xu，Xiaoyan Wang, Wenping Gu, Si Quan. Current Crowding Effect of Equilateral Polygon Emitter Transistors.IEEE Transactions on Electron Devices，64(6), 2017, 2770-2772. ( SCI IF: 2.605 )
[11]徐小波，张林，王晓艳, 谷文萍，胡辉勇, 葛建华， Si和SiGe三极管Early效应电路仿真模型综述，电子学报， 44(7)，2016, pp 1763-1771 ( EI)
[12]徐小波,王晓艳, 谷文萍, 张林, 全思, 葛建华,低光强下CdTe太阳电池的性能研究.半导体光电, 37(6), 2016, pp 796-799.
[13]徐小波，王晓艳，李艳波，胡辉勇，葛建华, SOI SiGe HBT集电结渡越时间模型研究,微电子学, 45(5)， 2015， pp 681-684.
[14]Xu Xiao-Bo, Zhang Bin, Yang Yin-Tang, and Li Yue-Jin, An analytical model of SiGe heterojunction bipolar transistors on SOI substrate for large current situation, Chinese Physics Letters, 2013, 30(2): 028502-1~4; (SCI: 000315217000060 IF: 0.8)
[15]Xiao-Bo Xu He-Ming Zhang, Hui-Yong Hu, and Jiang-Tao Qu, Early effect of SiGe heterojunction bipolar transistors, Solid State Electronics, 2012, 72(6): 1-3; (SCI: 000304585400001 SCI IF: 1.58)
[16]Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, Ma Jian-Li), and Xu Li-Jun, Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator, Chinese Physics B, 2011 20(1): 018502-1~5; (SCI: 000286676000102 SCI IF: 1.223)
[17]Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Ma Jian-li, Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics B, 2011 20(5): 058502-1~6; (SCI: 000290665200075 IF: 1.223)
[18]Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Qu Jiang-tao, Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator, Chinese Physics B, 2011 20(5): 058503-1~5; (SCI: 000290665200076 IF: 1.223)
[19]Xu Xiao-Bo, and Zhang He-Ming, An analytical avalanche multplcation model for partially depleted silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics letters, 2011 28(7): 078505-1~4; (SCI: 000293141800088 IF: 0.8)
[20]Xu Xiao-Bo, Xu Kai-Xuan, Zhang He-Ming, and Qin Shan-Shan A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects, Chinese Physics B, 2011 20(9): 098501-1~5; (SCI: 000295964200078 IF: 1.223)
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