陈益钢 - 上海大学 - 材料科学与工程学院

研究领域

（1）材料的微结构和表面改性的研究；（2）薄膜电子材料和器件的研究；（3）超细粉体材料的合成和应用研究；（4）航空功能材料的研究；（5）离子束和固体的相互作用。

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N. Zen, Y.G. Chen, K. Suzuki, M. Ohkubo, S. Miki and Zhen Wang, Development of Superconducting Strip Line Detectors (SSLDs) for Time-of-Flight Mass Spectrometers (TOF-MS), IEEE Transactions on Applied Superconductivity 19, 354 (2009). Y.G. Chen, T. Itatani, M. Ohkubo, n-channel GaAs MESFETs for cryogenic application, Physica Status Solidi C 5, 2805 (2008). T. Makino, H. Kato, M. Ogura, H. Watanabe, S. Ri, Y.G. Chen, S. Yamasaki and H. Okushi, Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction, Diamond and Related Materials 15, 513-516 (2006). T. Makino, H. Kato, S. Ri, Y.G. Chen and H. Okushi, Electrical characterization of homoepitaxial diamond p-n+ junction, Diamond and Related Materials 14( no.11-12), 1995 (2005). Y.G. Chen, M. Ogura, T. Makino, S. Yamasaki and H. Okushi, Diamond Schottky barrier diodes with low specific on-resistance, Semiconductor Science and Technology 20(No.12), 1203 (2005). Y.G. Chen, M. Ogura, S. Yamasaki and H. Okushi, Ohmic contacts on p-type homoepitaxial diamond and their thermal stability, Semiconductor Science and Technology 20, 860(2005). Y.G.Chen, M.Ogura and H.Okushi, Schottky junction properties on high quality B-doped homoepitaxial diamond thin films, Journal of Vacuum Science and Technology B 22(4), 2084 (2004). Y.G.Chen, M.Ogura and H.Okushi, Investigation of specific contact resistance of ohmic contacts to B-doped homoepitaxial diamond using transmission line model, Diamond and Related Materials 13, 2121 (2004). Y.G.Chen, M.Ogura, M.Kondo and H.Okushi, High performance diamond/amorphous silicon p-n+ heterojunctions，Applied Physics Letters 85 (11), 2110 (2004). Y.G.Chen, M.Ogura, H.Okushi and N.Kobayashi, Characterization of capacitance-voltage features of Ni/diamond Schottky diodes on oxidized boron-doped homoepitaxial diamond film, Diamond and Related Materials 12 (8), 1340 (2003). Y.G.Chen, M. Ogura, N. Kobayashi and H. Okushi, Temperature dependence and effect of series resistance on the electrical characteristics of metal/diamond Schottky diodes based on boron-doped homoepitaxial diamond films, Applied Physics Letters 82 (24), 4367 (2003). Y.G.Chen, M.Hasegawa, H.Okushi, S.Koizumi, H.Yoshida, T.Sakai and N.Kobayashi, Electrical properties of graphite/homoepitaxial diamond contact, Diamond and Related Materials 11, 451(2002). Y.G.Chen, M.Hasegawa, S.Yamanaka, H.Okushi and N.Kobayashi, Electrical properties of graphite/p-type homoepitaxial diamond contact, Materials Science Forum 389-393, 945 (2002). Y.G.Chen and B.X.Liu, Interface-driven alloying and metallic glass formation in nano-multilayers in an immiscible Y-Nb system, Acta Materialia 47 (4), 1389 (1999). C.Lin, Y.G.Chen and B.X.Liu, Sequential disordering observed during ion-induced amorphization in the Mo-Fe multilayered films, Nucl. Instr. Meth. in Phys. Res. B 148, 946 (1999).