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1.K.P.Jia,Y.J.Su,Y.Chen,J.Yang,P.Lv,Z.H.Zhang,H.L.Zhu,Ch.Zhao,T.Ch.Ye.“Effectsofdefectsandthermaltreatmentonthepropertiesofgraphene”,Vacuum,Volume116,Pages90-95
2.K.P.Jia,J.Luo,R.Y.Hu,J.Zhan,H.S.Cao,Y.J.Su,H.L.Zhu,L.Xie,Ch.Zhao,D.P.Chen,T.Ch.Ye.“EvaluationofPMMAresiduesasafunctionofbakingtemperatureandanovelgrapheneheat-free-transferprocesstoreducethem”,ECSJSS&T5(3)P138-141
3.K.P.Jia,Y.J.Su*,J.Zhan,K.Shahzad,H.L.Zhu,C.Zhao,J.Luo*.“EnhancedEnd-ContactsbyHeliumIonBombardmenttoImproveGraphene-MetalContacts”,nanomaterials,6,158
4.K.P.Jia,J.Yang,Y.J.Su,P.F.Nie,J.Zhong,Q.Q.Liang,H.L.Zhu.“Stabilityanalysisofaback-gategraphenetransistorinairenvironment”,JournalofSemiconductors,Volume34,No.8
5.G.X.Wan,H.L.Zhu*,X.Wei,X.G.Yin,K.PJia*.“InfluenceofDopantsProfileonRandomDopantFluctuationandOptimizationforBulkFinFET”,ECSJSS&T6(7)M79-M82
6.X.Y.Yan,K.P.Jia*,Y.J.Ma,J.Luo,Y.Y.Wei,Y.J.Su*.“Edge-contactformedbyoxygenplasmaandrapidthermalannealingtoimprovemetal-graphenecontactresistance”ECSJSS&T7(2)M11-M15
7.Z.J.Zhao,K.P.Jia,J.C.Shaw,Z.W.Zhu,W.Wan,L.J.Zhan,M.P.Li,H.S.Wang,X.P.Chen,Z.C.Li,S.S.Chen,Y.H.Zhou,R.B.Kaner*,W.W.Cai*.“Synthesisofsub-millimeterBi-/multi-layergraphenebydesigningasandwichedstructureusingcopperfoils”AppliedPhysicsLetter109,123107
8.Y.Pan,K.P.Jia,K.L.Huang,Z.H.Wu,G.B.Bai,J.H.Yu,Z.Z.Hou,Q.Z.Zhang,H.X.Yin*,“Near-idealsubthresholdswingMoS2back-gatetransistorswithoptimizedultrathinHfO2dielectriclayer”,Nanotechnology
9.J.Yang,K.P.Jia,Y.J.Su,Y.Chen,Ch.Zhao.“Hysteresisanalysisofgraphenetransistorunderrepeatedtestandgatevoltagestress”,JournalofSemiconductors,Volume35,No.9
10.G.L.Wang,J.Luo,C.L.Qin,H.S.Cui,J.B.Liu,K.P.Jia,J.J.Li,T.Yang,J.F.Li,H.X.Yin,C.Zhao,T.C.Ye,P.Yang,G.Jayakumar,H.H.Radamson.“IntegrationofSelectiveEpitaxialGrowthofSiGe/Gelayersin14nmNodeFinFETs”ECSTransactions,75(8)273-279
11.Z.Y.Zhu,H.L.Zhu,S.M.Wang,Y.B.Liu,X.G.Yin,K.P.Jia,C.Zhao.“Negative-CapacitanceCharacteristicsinaSteady-StateFerroelectricCapacitorMadeofParallelDomains”.IEEEElectronDeviceLetterPP(99):1-1
12.K.Luo,Z.Z.Hou,J.X.Yao,K.P.Jia,W.Yang,Z.H.Wu,H.X.Yin,W.G.Wang,“Afirstprinciplestudyofthecarriermobilityandinjectionvelocityforstrained2Dmaterial-basedMOSFETs”IEEES3SConference
13.Y.Pan,H.X.Yin,K.L.Huang,Z.H.Zhang,Q.Z.Zhang,K.P.Jia,Z.H.Wu,K.Luo,J.H.Yu,J.F.Li,W.G.Wang,T.C.Ye.,“Novel10nmGateLengthMoS2TransistorFabricatedonSiFinSubstrate”,IEEEJournaloftheElectronDevicesSociety7(1):483-488
14.W.X.Huang,H.L.Zhu,K.P.Jia,X.G.Yin,C.Li,Y.K.Zhang,J.J.Xiang,Z.H.Wu,L.R.Gan,“SimulationsofVNW-FETswithAdjustableSpacer-LikeNegativeCapacitorsBasedonExperimentalData”,ECSJournalofSolidStateScienceandTechnology8(2):Q38-Q42
15.胡荣炎,贾昆鹏,陈阳,战俊,粟雅娟,“石墨烯掺杂研究进展”,微纳电子技术,Vol.52No.11
16.战俊,粟雅娟,罗军,贾昆鹏,段宁远,闫祥宇,“用于FET的PECVDSiNx掺杂MoS2的有效性与可控性”.微纳电子技术,Vol.54No.4
17.战俊,粟雅娟,贾昆鹏,罗军,闫祥宇,“基于CVD单层MoS2FET的光电探测器”.微纳电子技术,Vol.54No.7
18.闫祥宇,粟雅娟,贾昆鹏,李梅,马源俊,韦亚一.“石墨烯/金属接触研究进展”.微纳电子技术,Vol.54No.11
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