个人简介
2008-至今:中国科学院微电子研究所;
2006-2008年:日本半导体MIRAI项目;
2003-2006年:日本东京大学,获得工学博士学位;
1998-2003年:兰州大学,获得理学博士学位;
1997-1998年:中国空间技术研究院第510研究所;
1992-1997年:兰州大学,本科学习。
近期论文
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1.XiaoleiWang,KaiHan,WenwuWang,ShijieChen,XueliMa,DapengChen,JingZhang,JunDu,YuhuaXiong,AnpingHuang,“Physicaloriginofdipoleformationathigh-k/SiO2interfaceinmetal-oxide-semiconductordevicewithhigh-k/metalgatestructure”Appl.Phys.Lett.(Inpress).
2.WenwuWang,KojiAkiyama,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“EffectofAldiffusion-inducedpositiveflatbandvoltageshiftontheelectricalcharacteristicsofAl-incorporatedhigh-kpMOSFETs”J.Appl.Phys.105(2009)064108.
3.WenwuWang,WataruMizubayashi,KojiAkiyama,ToshihideNabatame,AkiraToriumi,“SystematicinvestigationonanomalouspositiveVfbshiftinAl-incorporatedhigh-kgatestacks”Appl.Phys.Lett.92(2008)162901.
4.QiuxiaXu,GaoboXu,WenwuWang,DapengChen,ShaliShi,ZhengshengHan,TianchunYe,“StudyoncharacteristicsofthermallystableHfLaONgatedielectricwithTaNmetalgate”Appl.Phys.Lett.93(2008)252903.
5.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“PreparationofconductiveHfNbypostrapidthermalannealing-assistedMOCVDanditsapplicationtometalgateelectrode”Microelectron.Eng.85(2008)320.
6.KojiAkiyama,WenwuWang,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“OxygenvacancyinHfO2/ultra-thinSiO2gate-stack:ComprehensiveunderstandingofVfbroll-off”Symp.VLSITechnology.Dig.Tech.(2008)80.
7.WataruMizubayashi,KojiAkiyama,WenwuWang,MinoruIkeda,KunihikoIwamoto,YuuichiKamimuta,AkitoHirano,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“NovelVThtuningprocessforHfO2CMOSwithoxygen-dopedTaCx”Symp.VLSITechnology.Dig.Tech.(2008)42.
8.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“DielectricevolutioncharacteristicsofHfCNmetalelectrodegatedMOSstacks”J.Electrochem.Soc.154(2007)G25.
9.KojiAkiyama,WenwuWang,WataruMizubayashi,MinoruIkeda,HiroyukiOta,ToshihideNabatame,AkiraToriumi,“Vfbroll-offinHfO2gatestackafterhightemperatureannealingprocess”Symp.VLSITechnology.Dig.Tech.(2007)72.
10.WenwuWang,ToshihideNabatame,YukihiroShimogaki,“Hightemperatureannealing-inducedphasetransformationcharacteristicofnitrogen-richhafniumnitridefilms”Jpn.J.Appl.Phys.45(2006)L1183.