黄森 - 中国科学院微电子研究所 -

个人简介

简历：教育背景 2000-2004：大连理工大学物理系电子科学技术专业，学士 2004-2009：北京大学物理学院凝聚态物理专业，博士工作简历 2009-2012：香港科技大学电子及计算机工程学系博士后 2012-2017：中科院微电子研究所副研究员 2017至今：中科院微电子研究所研究员

研究领域

高性能GaN基电力电子和射频微波器件；Si基GaN智能功率集成电路；III族氮化物半导体电子器件的先进制备工艺，表征技术及器件物理研究。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1.Y.Zhang,K.Wei,S.Huang*,etal.,“High-Temperature-RecessedMillimeter-WaveAlGaN/GaNHEMTsWith42.8%Power-Added-Efficiencyat35GHz,”IEEEElectronDeviceLetters,vol.39,no.5,pp.727–730,May2018. 2.S.Huang,etal.,“Ultrathin-BarrierAlGaN/GaNHeterostructure:ARecess-FreeTechnologyforManufacturingHigh-PerformanceGaN-on-SiPowerDevices,”IEEETransactionsonElectronDevices,vol.65,no.1,pp.207–214,Jan.2018. 3.X.Liu,X.Wang*,Y.Zhang,K.Wei,Y.Zheng,X.Kang,H.Jiang,J.Li,W.Wang,X.Wu,X.Wang,andS.Huang*,“InsightintotheNear-ConductionBandStatesattheCrystallizedInterfacebetweenGaNandSiNxGrownbyLow-PressureChemicalVaporDeposition,”ACSAppl.Mater.Interfaces,vol.10,no.25,pp.21721–21729,Jun.2018. 4.S.Huang,etal.,“DevicephysicstowardshighperformanceGaN-basedpowerelectronics,”中国科学：物理学天文学,2016年，第46卷，第10期:107307. 5.S.Huang,etal.,“HighUniformityNormally-OFFGaNMIS-HEMTsFabricatedonUltra-Thin-BarrierAlGaN/GaNHeterostructure,”IEEEElectronDeviceLetters,vol.37,no.12,pp.1617–1620,Dec.2016. 6.Q.Bao,S.Huang*,etal.,“EffectofinterfaceandbulktrapsontheC–VcharacterizationofaLPCVD-SiNx/AlGaN/GaNmetal-insulator-semiconductorstructure,”SemiconductorScienceandTechnology,vol.31,no.6,p.065014,Jun.2016. 7.Z.Liu,S.Huang*,etal.,“InvestigationoftheinterfacebetweenLPCVD-SiNxgatedielectricandIII-nitrideforAlGaN/GaNMIS-HEMTs,”JournalofVacuumScience&TechnologyB,vol.34,no.4,p.041202,Jul.2016. 8.Y.Shi,S.Huang*,etal.,“NormallyOFFGaN-on-SiMIS-HEMTsFabricatedWithLPCVD-SiNxPassivationandHigh-TemperatureGateRecess,”IEEETransactionsonElectronDevices,vol.63,no.2,pp.614–619,Feb.2016. 9.J.Zhang,S.Huang*,etal.,“MechanismofTi/Al/Ti/WAu-freeohmiccontactstoAlGaN/GaNheterostructuresviapre-ohmicrecessetchingandlowtemperatureannealing,”ApplliedPhysicsLetters,vol.107,no.26,p.262109,Dec.2015. 10.S.Huang,etal.,“HighRFPerformanceEnhancement-ModeAl2O3/AlGaN/GaNMIS-HEMTsFabricatedWithHigh-TemperatureGate-RecessTechnique,”IEEEElectronDeviceLetters,vol.36,no.8,pp.754–756,Aug.2015. 11.S.Huang,etal.,“O3-sourcedatomiclayerdepositionofhighqualityAl2O3gatedielectricfornormally-offGaNmetal-insulator-semiconductorhigh-electron-mobilitytransistors,”ApplliedPhysicsLetters,vol.106,no.3,p.033507,Jan.2015. 12.S.Huang,etal.,“High-temperaturelow-damagegaterecesstechniqueandozone-assistedALD-grownAl2O3gatedielectricforhigh-performancenormally-offGaNMIS-HEMTs,”in2014IEEEInternationalElectronDevicesMeeting,2014,p.17.4.1-17.4.4. 13.S.Huang,etal.,“High-fmaxHighJohnson’sFigure-of-Merit0.2-umGateAlGaN/GaNHEMTsonSiliconSubstrateWithAlN/SiNxpassivation,”IEEEElectronDeviceLetters,vol.35,no.3,pp.315–317,Mar.2014. 14.S.Huang,etal.,“Effectsofinterfaceoxidationonthetransportbehaviorofthetwo-dimensional-electron-gasinAlGaN/GaNheterostructuresbyplasma-enhanced-atomic-layer-depositedAlNpassivation,”JournalofApplliedPhysics,vol.114,no.14,p.144509,Oct.2013. 15.S.Huang,etal.,“MechanismofPEALD-GrownAlNPassivationforAlGaN/GaNHEMTs:CompensationofInterfaceTrapsbyPolarizationCharges,”IEEEElectronDeviceLetters,vol.34,no.2,pp.193–195,Feb.2013. 16.S.Huang,etal.,“EffectivePassivationofAlGaN/GaNHEMTsbyALD-GrownAlNThinFilm,”IEEEElectronDeviceLetters,vol.33,no.4,pp.516–518,2012. 17.S.Huang,etal.,“ThresholdVoltageInstabilityinAl2O3/GaN/AlGaN/GaNMetal–Insulator–SemiconductorHigh-ElectronMobilityTransistors,”JapaneseJournalofAppliedPhysics,vol.50,no.11,p.110202,Oct.2011. 18.S.Huang,etal.,“EffectsofthefluorineplasmatreatmentonthesurfacepotentialandSchottkybarrierheightofAlxGa1?xN/GaNheterostructures,”ApplliedPhysicsLetters,vol.96,no.23,p.233510,Jun.2010. 19.S.Huang,etal.,“StudyoftheleakagecurrentmechanisminSchottkycontactstoAl0.25Ga0.75N/GaNheterostructureswithAlNinterlayers,”SemiconductorScienceandTechnology,vol.24,no.5,p.055005,May2009. 20.S.Huang,etal.,“CurrenttransportmechanismofAu∕Ni∕GaNSchottkydiodesathightemperatures,”ApplliedPhysicsLetters,vol.91,no.7,p.072109,Aug.2007.

学术兼职

IEEESeniorMember；国家优青；中科院拔尖青年科学家；中国科学院青年创新促进会会员