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1.
Y.H.Zhang,W.Q.Ma,J.L.Huang,etal.,“PushingDetectionWavelengthToward1μmbyTypeIIInAs/GaAsSbSuperlatticesWithAlSbInsertionLayers”,IEEEElectronDeviceLett.37,1166(2016).
2.
张艳华*,马文全,卫炀,黄建亮,曹玉莲,崔凯,郭晓璐,邵军,“长波和甚长波及其双色InAs/GaSbⅡ类超晶格红外探测器的研究进展”,中国科学:物理学力学天文学,44,390,(2014).
3.
Y.H.Zhang,W.Q.Ma,Y.L.Cao,J.L.Huang,Y.Wei,K.Cui,andJ.Shao,“Narrow-bandlong-/very-longwavelengthtwo-colortype-IIInAs/GaSbsuperlatticephotodetectorbychangingthebiaspolarity”,Appl.Phys.Lett.100,173511(2012).
4.
Y.H.Zhang,W.Q.Ma,Y.L.Cao,J.L.Huang,Y.Wei,K.Cui,andJ.Shao,“LongwavelengthinfraredInAs/GaSbsuperlatticephotodetectorswithInSb-likeandmixedinterfaces”,IEEEJ.QuantumElectron.47,1475(2011).
5.
B.Y.Nie,J.L.Huang,C.C.Zhao,W.J.Huang,Y.H.Zhang,Y.L.Cao,W.Q.Ma,“InAs/GaSbsuperlatticeresonanttunnelingdiodephotodetectorwithInAs/AlSbdoublebarrierstructure”,Appl.Phys.Lett.,114,053509(2019).
6.
W.J.Huang,J.L.Huang,Y.H.Zhang,C.C.Zhao,B.Y.Nie,Y.L.CaoW.Q.Ma,“Short/Mid-WaveTwo-BandType-IISuperlatticeInfraredHeterojunctionPhototransistor”,IEEEPhoto.Technol.Lett.,31,137(2019).
7.
J.L.Huang,W.Q.Ma,Y.H.Zhang,etal.,“Two-ColorniBinTypeIISuperlatticeInfraredPhotodetectorWithExternalQuantumEfficiencyLargerThan100%”,IEEEElectronDeviceLett.38,1266(2017).
8.
W.J.Huang,W.Q.Ma,J.L.Huang,Y.H.Zhang,etal.,“ElectronmobilityofinvertedInAs/GaSbquantumwellstructure”,SolidStateCommunications,267,29(2017).
9.
J.L.Huang,W.Q.Ma,Y.H.Zhang,etal.,“ExperimentaldeterminationofbandoverlapintypeIIInAs/GaSbsuperlatticebasedontemperaturedependentphotoluminescencesignal”,SolidStateCommunications,224,34(2015).
10.
J.L.Huang,W.Q.Ma,Y.H.Zhang,etal.,“ImpactofbandstructureofOhmiccontactlayersontheresponsefeatureofp-i-nverylongwavelengthtypeIIInAs/GaSbsuperlatticephotodetector”,Appl.Phys.Lett.,106,263502(2015).
11.
J.L.Huang,W.Q.Ma,Y.H.Zhang,etal.,“Narrow-bandTypeIISuperlatticePhotodetectorwithDetectionWavelengthShorterthan2um”,IEEEPhoto.Technol.Lett.,27,2276,(2015).
12.
K.Liu,W.Q.Ma,J.L.Huang,Y.H.Zhang,etal.,“Longerthan1.9μmphotoluminescenceemissionfromInAsquantumstructureonGaAs(001)substrate”,Appl.Phys.Lett.107,041103,(2015).
13.
J.L.Huang,W.Q.Ma,Y.Wei,Y.H.Zhang,K.Cui,andJ.Shao,“InterfaceeffectonstructuralandopticalpropertiesoftypeIIInAs/GaSbsuperlattices”,J.CrystalGowth.407,37(2014).
14.
Q.Li,W.Q.Ma,Y.H.Zhang,K.Cui,J.L.Huang,Y.Wei,etal.,“DarkcurrentmechanismofunpassivatedmidwavelengthtypeIIInAs/GaSbsuperlatticeinfraredphotodetector”,Chin.Sci.Bull.59,3696(2014).
15.
K.Cui,W.Q.Ma,Y.H.Zhang,etal.,“540-meVHoleActivationEnergyforGaSb/GaAsQuantumDotMemoryStructureUsingAlGaAsBarrier”,IEEEElectronDeviceLett.34,759(2013).
16.
X.L.Guo,W.Q.Ma,J.L.Huang,Y.H.Zhang,Y.Wei,K.Cui,Y.L.Cao,andQ.Li,“Electricalpropertiesoftheabsorberlayerformid,longandverylongwavelengthdetectionusingtype-IIInAs/GaSbsuperlatticestructuresgrownbymolecularbeamepitaxy”,Semicond.Sci.Technol.28,045004(2013).
17.
J.L.Huang,W.Q.Ma,Y.Wei,Y.H.Zhang,K.Cui,Y.L.Cao,X.L.GuoandJ.Shao,“HowtousetypeIIInAs/GaSbsuperlatticestructuretoreachdetectionwavelengthof2–3μm”,IEEEJ.QuantumElectro.48,1322(2012).
18.
J.L.Huang,W.Q.Ma,Y.L.Cao,Y.Wei,Y.H.Zhang,K.Cui,G.R.DengandY.L.Shi,“MidwavelengthtypeIIInAs/GaSbsuperlatticephotodetectorusingSiOxNypassivation”,Jpn.J.Appl.Phys.51,074002(2012).
19.
K.Cui,W.Q.Ma,J.L.Huang,Y.Wei,Y.H.Zhang,Y.L.Cao,Y.X.GuandT.Yang,“Multilayeredtype-IIGaSb/GaAsself-assembledquantumdotstructurewith1.35μmlightemissionatroomtemperature”,PhysicaE.45,173(2012).
20.
Y.Wei,W.Q.Ma,Y.H.Zhang,J.L.Huang,Y.L.Cao,andK.Cui,“HighstructuralqualityoftypeIIInAs/GaSbsuperlatticesforverylongwavelengthinfrareddetectionbyinterfacecontrol”,IEEEJ.QuantumElectron.48,512(2012).
21.
K.Cui,W.Q.Ma,Y.H.Zhang,J.L.Huang,,Y.Wei,Y.L.Cao,Z.Jin,andL.F.Bian,“Forwardbiasvoltagecontrolledinfraredphotodetectionandelectroluminescencefromap-i-nquantumdotstructure”,Appl.Phys.Lett.99,023502(2011).
22.
Y.Wei,W.Q.Ma,J.L.Huang,Y.H.Zhang,Y.H.Huo,K.Cui,L.H.Chen,andY.L.Shi,“Verylongwavelengthquantumdotinfraredphotodetectorusingamodifieddots-in-a-wellstructurewithAlGaAsinsertionlayers”,Appl.Phys.Lett.98,103507(2011).
23.
J.L.Huang,W.Q.Ma,Y.Wei,Y.H.Zhang,Y.H.Huo,K.Cui,andL.H.Chen,“Two-colorIn0.4Ga0.6As/Al0.1Ga0.9Asquantumdotinfraredphotodetectorwithdoubletunnellingbarriers”,Appl.Phys.Lett.98,103501(2011).
24.
Y.H.Huo,W.Q.Ma,Y.H.Zhang,L.H.ChenandY.L.Shi“Quantumwellinfraredphotodetectorsimultaneouslyworkingintwoatmosphericwindows”,AppliedPhysicsA,100,415(2010).