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1.
YulinMeng,LianshanWang,*GuijuanZhao,FangzhengLi,HuijieLi,ShaoyanYang,andZhanguoWang,“RedEmissionofInGaN/GaNMultiple-Quantum-WellLight-EmittingDiodeStructuresWithIndium-RichClusters”,Phys.StatusSolidiA215(23),1800455(2018)
2.
LianshanWang*,GuijuanZhao,YulinMeng,HuijieLi,ShaoyanYang,ZhanguoWang,“Comparativeinvestigationofsemiploar(11-22)GaNlayersonmplanesapphirewithdifferentnucleationlayers”,JournalofNanoscienceandNanotechnology,18,7446(2018)
3.
FangzhengLi,LianshanWang*,GuijuanZhao,YulinMeng,HuijieLi,YananChen,ShaoyanYang,PengJin,andZhanguoWang,“TheResidualStressandAlIncorporationofAlGaNEpilayersbyMetalorganicChemicalVaporDeposition”,JournalofNanoscienceandNanotechnology,18,7484(2018)
4.
GuijuanZhao,HuijieLi,LianshanWang,YulinMeng,FangzhengLi,HongyuanWei,ShaoyanYangandZhanguoWang,“Measurementofsemipolar(11-22)planeAlN/GaNHeterojunctionBandOffsetsbyX-RayPhotoelectronSpectroscopy”,AppliedPhysicsA:MaterialsScience&Processing,124(2)，130(2018)
5.
GuijuanZhao,LianshanWang*,HuijieLi,YulinMeng,FangzhengLi,ShaoyanYang,ZhanguoWang,“StructuralandOpticalPropertiesofSemi-polar(11-22)InGaN/GaNGreenLight-EmittingDiodeStructure”,submittedtoAppl.Phys.Lett.112,052105(2018)
6.
FangzhengLi,LianshanWang,GuijuanZhao,YulinMeng,HuijieLi,ShaoyanYang,ZhanguoWang,“PerformanceenhancementofAlGaN-basedultravioletlight-emittingdiodesbyinsertingthelastquantumwellintoelectronblockinglayer”,SuperlatticesandMicrostructures,110C(2017)324-329(通讯作者)
7.
GuijuanZhao,HuijieLi,LianshanWang*,YulinMeng,ZeshengJi,FangzhengLi,HongyuanWei,ShaoyanYang,ZhanguoWang,“Anisotropicallybiaxialstraininnon-polar(112–0)planeInxGa1−xN/GaNlayersinvestigatedbyX-rayreciprocalspacemapping”,ScientificReports,7,4497-(2017)
8.
ZeshengJi,LianshanWang*,GuijuanZhao,Yulin,Meng,FangzhengLi,Huijie,Li,Shaoyan,Yang,ZhanguoWang,“GrowthandcharacterizationofAlNepilayersusingpulsedmetalorganicchemicalvapordeposition”,ChinesePhysicsB26,078102,(2017)
9.
HuijieLi,GuijuanZhao,LianshanWang,ZhenChenandShaoyanYang,“MorphologyControlledFabricationofInNNanowiresonBrassSubstrates”,Nanomaterials,6(11),195-1-14,(2016)
10.
HuijieLi,GuijuanZhao,HongyuanWei,LianshanWang,ZhenChenandShaoyanYang,“GrowthofWell-AlignedInNNanorodsonAmorphousGlassSubstrates”,NanoscaleResearchLetters11(1),270-1-7(2016)
11.
GuijuanZhao,XiaoqingXu,HuijieLi,HongyuanWei,DongyueHan,ZeshengJi,YulinMeng,LianshanWang&ShaoyanYang,“TheimmiscibilityofInAlNternaryalloy”,ScientificReports,6,26600-1-6(2016)
12.
Dong-YueHan(韩东岳),Hui-JieLi(李辉杰),Gui-JuanZhao(赵桂娟),Hong-YuanWei(魏鸿源),Shao-YanYang(杨少延),andLian-ShanWang(汪连山),“AluminumincorporationefficienciesinA-andC-planeAlGaNgrownbyMOVPE”,ChinesePhysicsB25(4),048105-1-6(2016)
13.
GuijuanZhao,LianshanWang*,ShaoyanYang,HuijieLi,HongyuanWei,DongyueHan,andZhanguoWang“Anisotropicstructuralandopticalpropertiesofsemi-polar(11-22)GaNgrownonm-planesapphireusingdoubleAlNbufferlayers”,ScientificReports,6,20787-1-10(2016)
14.
HuijieLi;GuijuanZhao,SusuKong,DongyueHan,HongyuanWei,LianshanWang,ZhenChen,ShaoyanYang,“Morphologyandcompositioncontrolledgrowthofpolarc-axisandnonpolarm-axiswell-alignedternaryIII-nitridenanotubearrays”,Nanoscale,7(39),pp16481-16492(2015)
15.
HuijieLi,GuipengLiu,GuijuanZhao,HongyuanWei,LianshanWang,ShaoyanYang,ZhenChen,ZhanguoWang,“TheoreticalstudyoftheanisotropicelectronscatteringbystepsinvicinalAlGaN/GaNheterostructures”,PhysicaE,66,116–119(2015)
16.
WangJian-Xia(王建霞),WangLian-Shan*(汪连山),ZhangQian(张谦)，MengXiang-Yue（孟祥岳），YangShao-Yan(杨少延),ZhaoGui-Juan(赵桂娟),LiHui-Jie(李辉杰),WeiHong-Yuan(魏鸿源)，andWangZhan-Guo(王占国),“theEffectofthethicknessofInGaNinterlayeronthea-planeGaNepilayers”,ChinesePhysicsB24(2),026802-1-5(2015)
17.
SusuKong,HongyuanWei,ShaoyanYang,HuijieLi,YuxiaFeng,ZhenChen,XianglinLiu,LianshanWangandZhanguoWang,“Morphologyandstructurecontrolledgrowthofone-dimensionalAlNnanorodarraysbyhydridevaporphaseepitaxy”,RSCAdv.4(97),54902-54906(2014)
18.
YuxiaFeng,HongyuanWei,ShaoyanYang,ZhenChen,LianshanWang,SusuKong,GuijuanZhao,XianglinLiu,“CompetitivegrowthmechanismsofAlNonSi(111)byMOVPE”,Scientificreports4,6416-1-5(2014)
19.
HuijieLi,GuijuanZhao,GuipengLiu,HongyuanWei,ChunmeiJiao,ShaoyanYang,LianshanWang,andQinshengZhu,“StudyoftheonedimensionalelectrongasarraysconfinedbystepsinvicinalGaN/AlGaNheterointerfaces”,JournalofAppliedPhysics115(19),193704(2014)-1-5
20.
HuijieLi,ChangboLiu,GuipengLiu,Hongyuanwei,ChunmeiJiao,JianxiaWang,HengZhang,DongdongJin,YuxiaFeng,ShaoyanYang,LianshanWang,QinshengZhu,Zhan-GuoWang,“Single-crystallineGaNnanotubearraysgrownonc-Al2O3substratesusingInNnanorodsastemplates”,J.CrystalGrowth,389,1–4(2014)
21.
WangJian-Xia(王建霞),YangShao-Yan(杨少延),WangLian-Shan*(汪连山),LiHui-Jie(李辉杰),ZhangGui-Juan(赵桂娟),ZhangHeng(张恒),WeiHong-Yuan(魏鸿源),JiaoChun-Mei(焦春美),ZhuQin-Sheng(朱勤生),andWangZhan-Guo(王占国),“EffectsofV/IIIratioona-planeGaNepilayerswithanInGaNinterlayer”,ChinesePhysicsB23(2),026801(2014)
22.
Dong-DongJin,Lian-shanWang*,Shao-YanYang,Liu-WanZhang,Hui-jieLi,HengZhang,Jian-xiaWang,Ruo-feiXiang,Hong-yuanWei,Chun-meiJiao,Xiang-LinLiu,Qin-ShengZhu,andZhan-GuoWang,“Anisotropicscatteringeffectoftheinclinedmisfitdislocationonthetwo-dimensionalelectrongasinAl(In)GaN/GaNheterostructures”,JournalofAppliedPhysics,115(4),043702-1-4(2014)
23.
HuijieLi,GuipengLiu,HongyuanWei,ChunmeiJiao,JianxiaWang,HengZhang,DongDongJin,YuxiaFeng,ShaoyanYang,LianshanWang,QinshengZhu,andZhan-GuoWang,“ScatteringduetoSchottkybarrierheightspatialfluctuationontwodimensionalelectrongasinAlGaN/GaNhighelectronmobilitytransistors”,AppliedPhysicsLetters,103(23),232109-1-4(2013)
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