陈江山 - 中国科学院长春应用化学研究所 - 高分子物理与化学国家重点实验室

研究领域

（1）有机发光器件的界面、结构和制备工艺（2）有机半导体的电特性如载流子注入和传输

近期论文

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Hong Huang, Qiang Fu, Shaoqing Zhuang, Yakun Liu, Lei Wang, Jiangshan Chen*, Dongge Ma, Chuluo Yang, ""Novel deep blue OLED emitters with 1,3,5-tri(anthracen-10-yl)benzene-centered starburst oligofluorenes"", J. Phys. Chem. C, 115, 4872-4878, 2011. Tengling Ye, Minrong Zhu, Jiangshan Chen, Dongge Ma, Chuluo Yang, Wenfa Xie, Shiyong Liu, ""Efﬁcient multilayer electrophosphorescence white polymer light-emitting diodes with aluminum cathodes"", Org. Electron., 12, 154-160, 2010. Xianfeng Qiao, Jiangshan Chen, Xinglin Li, Dongge Ma, ""Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices"", J. Appl. Phys., 107, 104505, 2010. Jiangshan Chen*, Ralf Köhler, Thomas Gutberlet, Helmuth Möhwald, Rumen Krastev, ""Asymmetric lipid bilayer sandwiched in polyelectrolyte multilayer films through layer-by-layer assembly"", Soft Matter, 5, 228-233, 2009. Jiangshan Chen*, Wenfei Dong, Helmuth Möhwald, Rumen Krastev, ""Amplified fluorescence quenching of self-assembly polyelectrolyte-dye nanoparticle in aqueous solution"", Chem. Mater., 20, 1664-1666, 2008. Jiangshan Chen, Dongge Ma, ""Improved color purity and efficiency by a coguest emitter system in doped red light-emitting devices"", J. Lumin., 122, 636-638, 2007. Jiangshan Chen, Liling Xu, Yanhou Geng, Dongge Ma, ""Negative differential resistance effect in organic devices based on an anthracene derivative"", Appl. Phys. Lett., 89, 083514, 2006. Jiangshan Chen, Dongge Ma, ""Performance improvement by charge trapping of doping fluorescent dyes in organic memory devices"", J. Appl. Phys., 100, 034512, 2006. Jiangshan Chen, Dongge Ma, ""Single-layer organic memory devices based on N,N`-di(naphthalene-1-yl)-N,N`-diphenyl- benzidine"", Appl. Phys. Lett. 87, 023505, 2005. Jiangshan Chen, Dongge Ma, ""Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes"", J. Appl. Phys. 95, 5778-5781, 2004.