个人简介
导师简历:
1.教育经历
2002.9-2005.6中国科学院物理研究所,获凝聚态物理专业博士学位
1999.9-2002.6华中科技大学物理系,获光学专业硕士学位
1995.9-1999.6湖北师范学院物理系,获物理教育专业理学学士学位
2.工作经历
2010.8-至今扬州大学物理科学与技术学院
2006.5–2008.5日本大阪大学电子工程系JSPS博士后
研究领域
研究方向:
(1)半导体低维结构的物理特性计算
(2)半导体自旋电子学
研究内容
(1)研究半导体纳米结构中激子和双激子效应,通过量子调控将双激子态调回到简并态从而实现纠缠光子对。
(2)研究半导体纳米结构中自旋和量子比特。
科研项目
江苏省高校自然科学研究面上项目:InAs/GaAs量子点自旋动力学与自旋调控的理论研究
国家级大学生创新创业训练计划资助项目:GaN/InGaN太阳能电池性能的研究
近期论文
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[1]ShudongWu*,LichunWang,HuoquanLi,andXianghuaZeng,TuningoftheintersubbandabsorptioninashallowInAs/InPquantumwirebyatransverseelectricfield,SuperlatticesandMicrostructures67,33(2014).
[2]ShudongWu*andWeiweiXia,ExcitonpolarizabilityandabsorptionspectrainCdSe/ZnSnanocrystalquantumdotsinelectricfields,J.Appl.Phys.114,043709(2013).
[3]ShudongWu*andStankoTomić,Excitonstatesandoscillatorstrengthsinacylindricalquantumwirewithfinitepotentialundertransverseelectricfield,J.Appl.Phys.112,033715(2012).
[4]ShudongWu*andLiWan,ElectronicstructuresinaCdSesphericalquantumdotinamagneticfield:Diagonalizationmethodandvariationalmethod,J.Appl.Phys.111,063711(2012).
[5]ShudongWu*andLiWan,Excitonstatesandexcitonicabsorptionspectrainacylindricalquantumwireundertransverseelectricfield,Eur.Phys.J.B.85,12(2012).
[6]ShudongWu*andLiWan,ThermaldependenceoftheopticalgainandthresholdcurrentdensityofGaInNAs/GaAs/AlGaAsquantumwelllasers,J.Appl.Phys.110,123109(2011).
[7]ShudongWu*,Excitonbindingenergyandexcitonicabsorptionspectrainaparabolicquantumwireundertransverseelectricfield,PhysicaB406,4634(2011).
[8]ShudongWu*,YonggeCao,StankoTomić,andFumitaroIshikawa,TheopticalgainandradiativecurrentdensityofGaInNAs/GaAs/AlGaAsseparateconfinementheterostructurequantumwelllasers,J.Appl.Phys.107,013107(2010).
[9]ShudongWu,ZhiHuang,YuanLiu,QiufengHuang,WangGuo,YonggeCao,TheeffectsofindiumsegregationonthevalencebandstructureandopticalgainofGaInAs/GaAsquantumwells,PhysicaE41,1656(2009).
[10]ShudongWu,ZhiHuang,YuanLiu,QiufengHuang,WangGuo,YonggeCao,TheeffectsofindiumsegregationonexcitonbindingenergyandoscillatorstrengthinGaInAs/GaAsquantumwells,SuperlatticesandMicrostructures46,618(2009).
[11]ShudongWu*,M.Kato,M.Uchiyama,K.Higashi,F.Ishikawa,andM.Kondow,N2gasflowdrivenunintentionalincorporationofAlduringthegrowthofmolecularbeamepitaxy,AppliedPhysicsExpress1,035004(2008).
[12]ShudongWu*,M.Kato,M.Uchiyama,K.Higashi,F.Ishikawa,andM.Kondow,EffectoftheunintentionalincorporationofAlduringthemolecularbeamepitaxialgrowthofGaInNAsquantumwell.Phys.Stat.Sol.(C)5,2736(2008).
[13]ShudongWu,W.X.Wang,L.W.Guo,Z.H.Li,X.Z.Shang,F.Liu,Q.Huang,andJ.M.Zhou,OpticalpropertiesofAlAs/GaAsquantumwellswithantimonyasasurfactantbysolidsourcemolecularbeamepitaxy,JournalofCrystalGrowth,278,548(2005).
[14]ShudongWu,L.W.Guo,W.X.Wang,Z.H.Li,X.Z.Shang,H.Y.Hu,Q.Huang,J.M.Zhou,TheincorporationbehaviorofarsenicandantimonyinGaAsSb/GaAsgrownbysolidsourcemolecularbeamepitaxy,JournalofCrystalGrowth,270,359(2004).