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个人简介

招生专业 080903-微电子学与固体电子学 085400-电子信息 招生方向 半导体材料与器件,可调谐激光器 硅基光电子 外腔可调半导体谐激光器 教育背景 1993-09--1998-12 中国科学院半导体研究所 工学博士 1989-09--1993-06 北京师范大学 物理学学士 工作简历 2004-07~现在, 中国科学院上海微系统与信息技术研究所, 研究员 2001-02~2004-06,荷兰Eindhoven技术大学, 博士后 1999-01~2001-02,德国Paul-Drude研究所, 博士后 1993-09~1998-12,中国科学院半导体研究所, 工学博士 1989-09~1993-06,北京师范大学, 物理学学士 奖励信息 (1) 山东省科学技术奖, 三等奖, 省级, 2020 (2) 2017年度山东省高等学校科学技术奖, 一等奖, 省级, 2017 专利成果 ( 1 ) 束源炉中源材料熔化时对应热偶温度的测量方法, 2008, 第 1 作者, 专利号: ZL 2008 1 0035445.2 ( 2 ) 原位测量源炉中源材料质量的方法, 2008, 第 1 作者, 专利号: ZL 2008 1 0035437.3 ( 3 ) 一种制备石墨烯的方法, 2013, 第 2 作者, 专利号: ZL201210120753.7 ( 4 ) 一种硅基砷化镓复合衬底的制备方法, 2019, 第 2 作者, 专利号: 201610153371.2 ( 5 ) GaAs分子束外延生长过程中As原子最高结合率的测量方法, 2018, 第 1 作者, 专利号: 201610171321.7 ( 6 ) 一种外腔激光器及其调谐方法, 2018, 第 2 作者, 专利号: 201810503699.1 科研项目 ( 1 ) 大规模光子集成芯片, 参与, 部委级, 2016-07--2021-07 ( 2 ) 片上量子点激光器外延技术研究, 主持, 省级, 2017-01--2021-12 ( 3 ) 单片集成硅基量子点激光器的研究, 参与, 国家级, 2017-01--2020-12 ( 4 ) 超导计算机互连技术, 参与, 部委级, 2018-02--2022-12 ( 5 ) 2-4μm 室温连续激光器及中远红外探测器研究, 参与, 国家级, 2017-07--2020-12

近期论文

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(1) Long-wave infrared sub-monolayer quantum dot quantum cascade photodetector, Journal of Lightwave Technology, 2020, 第 8 作者 (2) Mid-and long-infrared emission properties of InxGa1− xAsySb1− y quaternary alloy with Type-II InAs/GaSb superlattice distribution, Journal of Alloys and Compounds, 2020, 第 6 作者 (3) Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs (111) substrate by molecular beam epitaxy, Applied Physics Letters, 2020, 第 7 作者 (4) Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2019, 第 6 作者 (5) Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy, Journal of Crystal Growth, 2019, 第 5 作者 (6) Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy, Journal of Crystal Growth, 2019, 第 4 作者 (7) High optical feedback tolerance of InAs/GaAs quantum dot lasers on germanium, Optics Express, 2018, 第 4 作者 (8) External cavity lasers using stripe mirrors with different mirror width, Journal of Modern Optics, 2017, 通讯作者 (9) Annealing effect of the InAs dot-in-well structure grown by MBE, J. Cryst. Growth, 2017, 通讯作者 (10) Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge, Opt. Express, 2017, 第 5 作者 (11) InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant, Appl. Opt., 2017, 第 6 作者 (12) Facile synthesis of highly graphitized nitrogen-doped carbon dots and carbon sheets with solid-state white-light emission, Materials letters, 2017, 第 7 作者 (13) Electronic states in low-dimensional nano-structures: Comparison between the variational and plane wave basis method, Superlattices and Microstructures, 2017, 第 3 作者 (14) Heteroepitaxy growth of GaAsBi on Ge(100) substrates by gas source molecular beam epitaxy, Applied Physics Express, 2016, 通讯作者 (15) Detailed study of the influence of InGaAs matrix on the strain reduction in the InAs dot-in-well structure, Nanoscale Research Letters, 2016, 通讯作者 (16) Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots, Nanoscale Research Letters, 2016, 通讯作者 (17) Influence of doping in InP buffer on photoluminescence behavior of InPBi, Jpn. J. Appl. Phys., 2016, 通讯作者 (18) Growth and material properties of InPBi thin films using gas source molecular beam epitaxy, Journal of Alloys and Compounds, 2016, 第 8 作者 (19) Wavelength tuning of InAs quantum dot laser by micromirror device, Journal of Crystal Growth, 2015, 通讯作者 (20) Highly luminescence carbon nanoparticles as yellow emission conversion phosphors, Materials Letters, 2015, 第 3 作者 (21) A facile and transfer-free path for template-less synthesis of carbon nanosheets, Materials Letters, 2015, 第 3 作者 (22) Junction-temperature Measurement in InAs/InP (100) Quantum-Dot Lasers, Chinese Physics Letters, 2015, 第 2 作者 (23) Analysis of mode-hop free tuning of folded cavity grating feedback lasers, Applied Optics, 2015, 通讯作者 (24) A novel method to measure the internal quantum efficiency and optical loss of laser diodes, Photonics Technology Letters, 2015, 通讯作者 (25) A wireless remote high-power laser device for optogenetics experiments, Laser Physics, 2015, 通讯作者 (26) A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst, Scientific Reports, 2014, 通讯作者 (27) Template-less synthesis of hollow carbon nanospheres for white light-emitting diodes, Material Letters, 2014, 第 3 作者 (28) Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates, Applied Surface Science, 2014, 第 2 作者 (29) High intensity single-mode peak observed in the lasing spectrum of InAs/GaAs quantum dot laser, Chin. Phys. Lett., 2013, 通讯作者 (30) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser, Materials Science in Semiconductor Processing, 2012, 第 2 作者 (31) Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy, Infrared Physics and Technology, 2012, 第 2 作者 (32) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot lasers grown by gas source molecular beam epitaxy, Physica E, 2012, 第 2 作者 (33) Measurements of I-V characteristic in InAs/InP quantum dot laser diode, Journal of Modern Optics, 2012, 第 2 作者 (34) Low-temperature characteristics of two-color InAs/InP quantum dots laser, Chin. Phys. Lett., 2012, 第 2 作者 (35) Quantum dot lasers grown by gas-source molecular-beam epitaxy, J. Cryst. Growth, 2011, 通讯作者 (36) High performance external cavity InAs/InP quantum dot lasers, Appl. Phys. Lett., 2011, 通讯作者 (37) InAs/GaAs qunatum dot lasers grown by gas-source molecular-beam epiatxy, J. Cryst. Growth, 2010, 通讯作者 (38) InAs/InP(100) quantum dot laser with high wavelength stability, Electron. Lett., 2010, 通讯作者 (39) Two-color quantum dot laser with tunable wavelength gap, Appl. Phys. Lett., 2009, 通讯作者 (40) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy, J. Cryst. Growth, 2009, 通讯作者 (41) Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy, Appl. Phys. Lett., 2008, 通讯作者

学术兼职

2017-08-01-2022-07-31,上海科技大学特聘教授, 特聘教授

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