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个人简介

招生专业 080903-微电子学与固体电子学 085208-电子与通信工程 招生方向 微电子学与固体电子学 半导体材料与光电子器件 教育背景 1989-02--1994-05瑞典哥德堡大学博士学位 1985-09--1988-06复旦大学硕士学位 1981-09--1985-06复旦大学学士学位 工作简历 2012-12~2018-12,中国科学院上海微系统与信息技术研究所,研究员 2012-12~2019-12,上海科技大学,特聘教授 2008-12~2028-11,瑞典查尔姆斯理工大学,教授 1999-06~2008-11,瑞典查尔姆斯理工大学,副教授 1994-07~1999-05,瑞典查尔姆斯理工大学,研究助理 1989-02~1994-05,瑞典哥德堡大学,博士学位 1985-09~1988-06,复旦大学,硕士学位 1981-09~1985-06,复旦大学,学士学位 教授课程 半导体器件物理学

研究领域

科研项目 (1)绝缘体上III-V族化合物衬底材料制备技术研究,主持,部委级,2013-01--2015-12 (2)2.8-4.0微米室温高性能半导体激光器材料和器件制备研究,主持,国家级,2014-01--2018-12 (3)中科院创新人才,主持,部委级,2013-01--2015-12 (4)应用于非制冷激光器的新型稀铋半导体材料研究,主持,国家级,2013-10--2018-12 (5)微纳系统材料、制造与器件物理,参与,国家级,2014-01--2016-12 (6)III-V和Ge集成高迁移率材料工程,参与,部委级,2013-01--2015-12 参与会议 (1)TBD20thInternationalConferenceonTransparentOpticalNetworks2018-07-01 (2)NearinfraredGaAsBiquantumwelllasersSPIEPhotonicsEurope2018.Strassbourg2018-04-22 (3)Lightemittingdevicesofdilutebismides8thInternationalWorkshoponBi-containingSemiconductors2017-07-23 (4)NovelgroupIVnano-andmicro-structuresforlightsourcesonsilicon2017IEEEPhotonicsSocietySummerTopicalsMeetingSeries2017-07-10 (5)ElectricallypumpedGaAsBilaserdiodes19thInternationalConferenceonTransparentOpticalNetworks2017-07-02 (6)RecentprogressondilutebismidesGlobalCongress&ExpoonMaterialsScienceandNanoscience2016-10-24 (7)DiluteIII-PBiandIII-SbBiforIRapplications18thInternationalConferenceonTransparentOpticalNetworks2016-07-10 (8)III-VlightemittersonGeandSisubstratesInternationalUnionofMaterialsResearchSocieties–InternationalConferenceonElectronicMaterials(IUMRS-ICEM2016)2016-07-04 专利成果 (1)单片集成具有晶格失配的晶体模板及其制作方法,2014,第1作者,专利号:No.201110394410.5 (2)GraphenefabricationbyCVDusingliquidcatalysts一种液态催化剂辅助化学气相沉积制备石墨烯的方法,2015,第1作者,专利号:No.201210096785.8 (3)Amethodforgraphenesynthesis一种制备石墨烯的方法,2013,第1作者,专利号:No.201210120753.7 (4)一种提高稀铋半导体材料稳定性的而方法,2013,第1作者,专利号:ZL201310264486.5 (5)一种GaAsOI结构及III-VOI结构的制备方法”,2015,第5作者,专利号:ZL2012.1.0559663.8 (6)一种III-VOI结构的制备方法,2016,第5作者,专利号:ZL2012.1.0559716.6 (7)一种发光二极管及光学相干层析成像系统,2016,第2作者,专利号:ZL2014.1.0052014.8 (8)基于铋元素的非矩形III-V族半导体量子阱的制备方法,2016,第1作者,专利号:ZL2013.1.0264472.3 (9)一种边发射半导体激光器腔面的非解理制备方法,2016,第2作者,专利号:ZL2013.1.0703155.7 (10)一种基于稀铋磷化物材料的多结太阳能电池结构,2017,第1作者,专利号:ZL2015.1.0151566.9 (11)一种单片原位形成图形衬底的方法,2017,第2作者,专利号:ZL2013.1.0629211.7 (12)基于硅基三维纳米线阵列的全环栅互补金属-氧化物-半导体场效应晶体管,2017,第1作者,专利号:ZL2013.1.0736928.1 (13)一种基于稀铋磷化物材料的中间带太阳能电池结构,2017,第1作者,专利号:ZL2015.1.0149341.X (14)一种二维锡烯材料的制备方法,2017,第2作者,专利号:201610436234.X (15)一种基于铋元素的GaAs基室温红外发光材料及其制备方法,2018,第1作者,专利号:CN2015106270367

近期论文

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(1)Theelectron-phononinteractionatdeepBi2Te3-semiconductorinterfacesfromBrillouinlightscattering,Theelectron-phononinteractionatdeepBi2Te3-semiconductorinterfacesfromBrillouinlightscattering,Sci.Rep.,2017,第5作者 (2)InducedunconventionalsuperconductivityonthesurfacestatesofBi2Te3topologicalinsulator,InducedunconventionalsuperconductivityonthesurfacestatesofBi2Te3topologicalinsulator,Nat.Comm.,2017,第7作者 (3)EffectofAnnealingontheStructuralPropertiesofGeSnThinFilmGrownbyMBE,EffectofAnnealingontheStructuralPropertiesofGeSnThinFilmGrownbyMBE,AIPAdv.,2017,第11作者 (4)PhotoluminescenceofInGaAs/GaAsBi/InGaAstype-IIquantumwellsgrownbygassourcemolecularbeamepitaxy,PhotoluminescenceofInGaAs/GaAsBi/InGaAstype-IIquantumwellsgrownbygassourcemolecularbeamepitaxy,Semicond.Sic.Technol.,2017,第11作者 (5)Designofhigh-Qcompactpassiveringresonatorsviaincorporatingaloss-compensatedstructureforhighperformanceangularvelocitysensinginmonolithicintegrated-optical-gyroscopes,Designofhigh-Qcompactpassiveringresonatorsviaincorporatingaloss-compensatedstructureforhighperformanceangularvelocitysensinginmonolithicintegrated-optical-gyroscopes,IEEESensorsJ.,2017,第11作者 (6)NoveltypeIIInGaAs/GaAsBiquantumwellforlongerwavelengthemission,NoveltypeIIInGaAs/GaAsBiquantumwellforlongerwavelengthemission,J.AlloyCompounds,2017,第11作者 (7)Bi2Te3photoconductivedetectorsonSi,Bi2Te3photoconductivedetectorsonSi,Appl.Phys.Lett.,2017,第11作者 (8)High-TransparencyAl/Bi2Te3Double-BarrierHeterostructures,High-TransparencyAl/Bi2Te3Double-BarrierHeterostructures,IEEETrans.Appl.Supercond.,2017,第5作者 (9)ElectronicandOpticalPropertiesofArseneneUnderUniaxialStrain,ElectronicandOpticalPropertiesofArseneneUnderUniaxialStrain,IEEEJ.Sel.Top.QuantumElectron.,2017,第11作者 (10)Spininjectionandhelicitycontrolofsurfacespinphotocurrentinathreedimensionaltopologicalinsulator,Spininjectionandhelicitycontrolofsurfacespinphotocurrentinathreedimensionaltopologicalinsulator,Nat.Comm.,2017,第3作者 (11)NovelDiluteBismide,Epitaxy,PhysicalPropertiesandDeviceApplication,NovelDiluteBismide,Epitaxy,PhysicalPropertiesandDeviceApplication,Crystals7,2017,第11作者 (12)Highlytensile-strainedsub-monolayerGenanostructureonGaSbstudiedbyscanningtunnelingmicroscopy,Highlytensile-strainedsub-monolayerGenanostructureonGaSbstudiedbyscanningtunnelingmicroscopy,Mater.Res.Exp.,2017,第11作者 (13)Negativethermalquenchingofbelow-bandgapphotoluminescenceinInPBi,Negativethermalquenchingofbelow-bandgapphotoluminescenceinInPBi,Appl.Phys.Lett.,2017,第11作者 (14)Growthandelectricalpropertiesofhigh-qualityInGaAsBithinfilmsusinggassourcemolecularbeamepitaxy,Growthandelectricalpropertiesofhigh-qualityInGaAsBithinfilmsusinggassourcemolecularbeamepitaxy,Jpn.J.Appl.Phys.,2017,第4作者 (15)StructuralpropertiesofGeSnthinfilmsgrownbymolecularbeamepitaxy,StructuralpropertiesofGeSnthinfilmsgrownbymolecularbeamepitaxy,AIPAdv.,2017,第11作者 (16)Tunablebandgapsinstanene/MoS2heterostructures,Tunablebandgapsinstanene/MoS2heterostructures,J.Mat.Sci.,2017,第11作者 (17)Structuralandelasticpropertiesofzinc-blendeandwurtziteInN1-xBixalloys,Structuralandelasticpropertiesofzinc-blendeandwurtziteInN1-xBixalloys,J.AlloyCompound.,2017,第11作者 (18)TheeffectofBicompositionontheelectricalpropertiesofInP1-xBix,TheeffectofBicompositionontheelectricalpropertiesofInP1-xBix,Sci.China-Phys.Mech.Astron.,2017,第10作者 (19)Facilesynthesisofhighlygraphitizednitrogen-dopedcarbondotsandcarbonsheetswithsolid-statewhite-lightemission,Facilesynthesisofhighlygraphitizednitrogen-dopedcarbondotsandcarbonsheetswithsolid-statewhite-lightemission,Mat.Lett.,2017,第11作者 (20)EfficiencyimprovementofGaInPsolarcellsbybroadbandomnidirectionalantireflectionthroughdielectriccompositenanostructures,EfficiencyimprovementofGaInPsolarcellsbybroadbandomnidirectionalantireflectionthroughdielectriccompositenanostructures,Sol.EnergyMater.Sol.Cells,2017,第11作者 (21)1.142µmGaAsBi/GaAsQuantumWellLasersGrownbyMolecularBeamEpitaxy,1.142µmGaAsBi/GaAsQuantumWellLasersGrownbyMolecularBeamEpitaxy,ACSPhotonics,2017,第11作者 (22)Quasiparticleandopticalpropertiesofstrainedstaneneandstanane,Quasiparticleandopticalpropertiesofstrainedstaneneandstanane,Sci.Rep.,2017,第11作者 (23)TheoreticalInvestigationofBiaxiallyTensile-StrainedGermaniumNanowires,TheoreticalInvestigationofBiaxiallyTensile-StrainedGermaniumNanowires,NanoscaleRes.Lett.,2017,第11作者 (24)IncorporationofBiatomsinInPstudiedattheatomicscalebycross-sectionalscanningtunnelingmicroscopy,IncorporationofBiatomsinInPstudiedattheatomicscalebycross-sectionalscanningtunnelingmicroscopy,Phys.Rev.Mater.,2017,第11作者 (25)Vapor-solid-solidgrownGenanowiresatintegratedcircuitcompatibletemperaturebymolecularbeamepitaxy,Vapor-solid-solidgrownGenanowiresatintegratedcircuitcompatibletemperaturebymolecularbeamepitaxy,J.Appl.Phys.,2017,第11作者 (26)ClosingthebandgapforIII-Vnitridestowardmid-infraredandTHzapplications,ClosingthebandgapforIII-Vnitridestowardmid-infraredandTHzapplications,Sci.Rep.,2017,第11作者 (27)Electronicandexcitonicpropertiesoftwo-dimensionalandbulkInNcrystals,Electronicandexcitonicpropertiesoftwo-dimensionalandbulkInNcrystals,RSCAdv.,2017,第11作者 (28)InfluenceofGrowthConditionsonBiConcentrationinGaAsBiThinFilmsGrownbyGSMBE,InfluenceofGrowthConditionsonBiConcentrationinGaAsBiThinFilmsGrownbyGSMBE,J.Mat.Sci.Eng,2017,第11作者 (29)NanoscaledistributionofBiatomsinInP1−xBix,NanoscaledistributionofBiatomsinInP1−xBix,Sci.Rep.,2017,第11作者 (30)Structural,electronic,vibrationalandopticalpropertiesofBi-nclusters,Structural,electronic,vibrationalandopticalpropertiesofBi-nclusters,Mod.Phys.Lett.,2017,第11作者 (31)Growthmodeoftensile-strainedGequantumdotsgrownbymolecularbeamepitaxy,Growthmodeoftensile-strainedGequantumdotsgrownbymolecularbeamepitaxy,J.Phys.D,2017,第11作者 (32)AugerrecombinationatlowtemperaturesinInGaAs/InAlAsquantumwellprobedbyphotoluminescence,AugerrecombinationatlowtemperaturesinInGaAs/InAlAsquantumwellprobedbyphotoluminescence,J.Lumin,2016,第4作者 (33)GrowthandmaterialpropertiesofInPBithinfilmsusinggassourcemolecularbeamepitaxy,GrowthandmaterialpropertiesofInPBithinfilmsusinggassourcemolecularbeamepitaxy,J.AlloysCompounds,2016,第11作者 (34)DetailedstudyoftheinfluenceofInGaAsmatrixonthestrainreductionintheInAsdot-in-wellstructure,DetailedstudyoftheinfluenceofInGaAsmatrixonthestrainreductionintheInAsdot-in-wellstructure,NanoscaleRes.Lett,2016,第11作者 (35)Bi-inducedacceptorlevelresponsibleforpartialcompensationofnativefreeelectrondensityinInP1-xBixdilutebismidealloys,Bi-inducedacceptorlevelresponsibleforpartialcompensationofnativefreeelectrondensityinInP1-xBixdilutebismidealloys,J.Phys.D-Appl.Phys,2016,第11作者 (36)HeteroepitaxygrowthofGaAsBionGe(100)substratebygassourcemolecularbeamepitaxy,HeteroepitaxygrowthofGaAsBionGe(100)substratebygassourcemolecularbeamepitaxy,Appl.Phys.Exp,2016,第11作者 (37)TheeffectofBi-Inhetero-antisitedefectsinIn1-xPBixalloy,TheeffectofBi-Inhetero-antisitedefectsinIn1-xPBixalloy,Mod.Phys.Lett.B,2016,第11作者 (38)InfluenceofGaAsBimatrixonopticalandstructuralpropertiesofInAsquantumdots,InfluenceofGaAsBimatrixonopticalandstructuralpropertiesofInAsquantumdots,NanoscaleRes.Lett.,2016,第11作者 (39)AnomalousphotoluminescenceinInP1-xBix,AnomalousphotoluminescenceinInP1-xBix,Sci.Rep,2016,第11作者 (40)Bismuth-content-dependentpolarizedRamanspectrumofInPBialloy,Bismuth-content-dependentpolarizedRamanspectrumofInPBialloy,Chin.Phys.B,2016,第11作者 (41)StructuralpropertiesandphasetransitionofNaadsorptiononmonolayerMoS2,StructuralpropertiesandphasetransitionofNaadsorptiononmonolayerMoS2,NanoscaleRes.Lett.,2016,第11作者 (42)OpticalpropertiesandbandbendingofInGaAs/GaAsBi/InGaAstype-IIquantumwellgrownbygassourcemolecularbeamepitaxy,OpticalpropertiesandbandbendingofInGaAs/GaAsBi/InGaAstype-IIquantumwellgrownbygassourcemolecularbeamepitaxy,J.Appl.Phys.,2016,第11作者 (43)Structuralandelectronicpropertiesoftwo-dimensionalhybridstaneneandgrapheneheterostructure,Structuralandelectronicpropertiesoftwo-dimensionalhybridstaneneandgrapheneheterostructure,NanoscaleRes.Lett.,2016,第11作者 (44)ExternalelectricfieldeffectonexcitonbindingenergyinInGaAsP/InPcylindricalquantumwires,ExternalelectricfieldeffectonexcitonbindingenergyinInGaAsP/InPcylindricalquantumwires,Phys.BCondensedMat.,2016,第11作者 (45)PhotoluminescenceprobingofinterfaceevolutionwithannealinginInGa(N)As/GaAssinglequantumwells,J.Appl.Phys.,2015,第11作者 (46)BismutheffectsonelectroniclevelsinGaSb(Bi)/AlGaSbquantumwellsprobedbyinfraredphotoreflectance,Chin.Phys.Lett.,2015,第11作者 (47)ThermoelectricpropertiesofSnSecompound,J.AlloysandCompound,2015,第11作者 (48)NovelInGaPBiSingleCrystalGrownbyMolecularBeamEpitaxy,Appl.Phys.Exp.,2015,第11作者 (49)EffectofrapidthermalannealingonInP1-xBixgrownbymolecularbeamepitaxy,Semicond.Sci.Technol.,2015,第11作者 (50)RamanspectroscopyofepitaxialtopologicalinsulatorBi2Te3thinfilmsonGaNsubstrates,Mod.Phys.Lett.B,2015,第11作者 (51)GrowthofsemiconductoralloyInGaPBionInPbymolecularbeamepitaxy,Semicond.Sci.Technol,2015,第11作者 (52)RamanScatteringstudiesofdiluteInP1-xBixalloysrevealunusuallystrongoscillatorstrengthforBi-inducedmodes,Semicond.Sci.Technol.,2015,第11作者 (53)StructuralandopticalcharacterizationsofInPBithinfilmsgrownbymolecularbeamepitaxy,NanoscaleRes.Lett.,2014,第11作者 (54)Mobilityenhancementintensile-strainedGegrownonInAlPmetamorphictemplates,Appl.Surf.Sci,2014,第11作者 (55)Mobilityenhancementintensile-strainedGegrownonInAlPmetamorphictemplates,Appl.Surf.Sci,2014,第11作者 (56)Thermoelectricpropertiesofquaternary(Bi,Sb)2(Te,Se)3compound,J.AlloysandCompound,2014,第11作者 (57)First-principlesstudyonelectronicandmagneticpropertiesof(Mn,Fe)-codopedZnO,J.MagnetismandMagneticMat,2014,第11作者 (58)StraininducedcompositionprofileinInGaN/GaNcore-shellnanowires,SolidStateCommun.,2014,第11作者 (59)Investigationonstructural,electronicandmagneticpropertiesofMn-dopedGa12N12clusters,J.Mat.Sci.,2014,第11作者 (60)Magneticpropertiesin(Mn,Fe)-codopedZnOnanowire,ThinSolidFilm,2014,第11作者 (61)StrainandlocalizationeffectsinInGaAs(N)quantumwells:tuningthemagneticresponse,J.Appl.Phys.,2014,第11作者 (62)Contactlesselectronreflectanceandtheoreticalstudiesofbandgapandspin-orbitsplittinginInP1-xBixdilutebismidewithx≤0.034,Appl.Phys.Lett.,2014,第11作者 (63)Template-lessSynthesisofHollowCarbonNanospheresforWhiteLight-EmittingDiodes,Mat.Lett.,2014,第11作者 (64)PointdefectbalanceinepitaxialGaSb,Appl.Phys.Lett.,2014,第11作者 (65)InPBisinglecrystalsgrownbymolecularbeamepitaxy,Sci.Rep.,2014,第11作者 (66)StructuralandelectronicpropertiesofInPBialloys,Mod.Phys.Lett.,2014,第11作者 (67)ElectronicandopticalpropertiesofInGaAs/GaAsquantumdotswithtunableaspect-ratio,Mod.Phys.Lett.,2014,第11作者 (68)Anovelsemiconductorcompatiblepathfornano-graphenesynthesisusingCBr4precursorandGacatalyst,Sci.Rep,2014,第11作者 (69)VanadiumdopingonmagneticpropertiesofH-passivatedZnO,J.Mat.Sci.,2014,第11作者 (70)StructuralandelectronicpropertiesofWurtziteGaX(X=N,P,As,Sb,Bi)underin-plainbiaxialstrains,Superlatt.Microstruct.,2014,第11作者 (71)PhasetransitionofbismuthtelluridethinfilmsgrownbyMBE,Appl.Phys.Exp.7,2014,第11作者 (72)Ramanenhancementbygraphene-Ga2O32Dbilayerfilm,NanoscaleRes.Lett.,2014,第11作者 (73)BismuthalloyingpropertiesinGaAsnanowires,J.SolidStateChem.,2013,第11作者 (74)StructuralpropertiesandenergeticsofGaAsnanowires,PhysicaE-Low-DimensionalSystems&Nanostructures,2013,第11作者 (75)Atheoreticalinvestigationonthermoelectricperformanceofternary(Bi1-xSbx)2Te3compound,J.Mat.Sci.,2013,第11作者 (76)Growthoptimization,straincompensationandstructuredesignofInAs/GaSbtype-IIsuperlatticesformid-wavelengthinfraredimaging,Cryst.StructureTheoryandAppl.2,2013,第11作者 (77)Shallow-terrace-likeinterfaceindilute-bismuthGaSb/AlGaSbsinglequantumwellsevidencedbyphotoluminescence,J.Appl.Phys.,2013,第11作者 (78)MolecularbeamepitaxygrowthofInSb1-xBixthinfilms,J.Cryst.Growth,2013,第11作者 (79)Highqualitystrain-compensatedmultipleInAs/AlGaNAsquantumdotlayersgrownbyMBE,Phys.StatusSolidi,2013,第11作者 (80)OpticalpropertiesofInGaAsBi/GaAsstrainedquantumwellsstudiedbytemperature-dependentphotoluminescence,ChinesePhysicsB22,2013,第11作者 (81)Chemicalvapordepositionofgrapheneonliquidmetalcatalysts,Carbon53,2013,第11作者 (82)ElectronicStructureandThermoelectricPropertiesofBi2(Te1-xSex)3compound,SolidStateCommun.,2013,第11作者 发表著作 “LatticeEngineering,TechnologiesandApplications”,PanStanford,2013-01,第1作者

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