龙世兵 - 中国科学院大学

个人简介

教育背景 2002-04--2005-06 中国科学院微电子研究所博士（微电子学与固体电子学） 1999-09--2002-03 北京科技大学学士（应用物理）、硕士（材料物理）工作简历 2011-02~2012-02,巴塞罗那自治大学, 访问学者 2010-03~2010-07,国家自然科学基金委员会信息学部四处, 兼聘 2005-07~现在, 中国科学院微电子研究所, 助理研究员、副研究员、研究员 2002-04~2005-06,中国科学院微电子研究所, 博士（微电子学与固体电子学） 1999-09~2002-03,北京科技大学, 学士（应用物理）、硕士（材料物理）

研究领域

超宽禁带半导体功率器件、阻变存储器、纳米加工

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Review of deep ultraviolet photodetector based on gallium oxide, Chin. Phys. B, 2019, 通讯作者 Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties, AIP Advances, 2018, 通讯作者 Schottky Barrier Rectifier Based on (100) β-Ga2O3 and its DC and AC Characteristics, IEEE Electron Device Letters, 2018, 通讯作者 Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2, IEEE Electron Device Letters, 2018, 通讯作者 C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3, AIP Advances, 2018, 通讯作者 An overview of the ultrawide bandgap Ga₂O₃ semiconductor based Schottky barrier diode for power electronics application, Nanoscale Research Letters, 2018, 通讯作者 Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material, Journal of Semiconductor, 2018, 通讯作者 Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects, Advanced Materials, 2018, 其他（合作组作者） Recommended Methods to Study Resistive Switching Devices, Advanced Electronic Materials, 2018, 其他（合作组作者） Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two-dimensional layered materials, Small, 2017, 通讯作者 Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics, Applied Physics Letters, 2017, 通讯作者 Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator, Scientific Reports, 2017, 通讯作者 A cell-based clustering model for the reset statistics in RRAM, Applied Physics Letters, 2017, 通讯作者 Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor, Applied Physics Letters, 2017, 通讯作者 Anisotropic magnetoresistance of nano-conductive filament in Co/HfO2/Pt resistive switching memory, Nanoscale Research Letters, 2017, 通讯作者 Reprogrammable logic in memristive crossbar for in-memory computing, Journal of Physics D-Applied Physics, 2017, 通讯作者 Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array, Nanoscale, 2017, 第 8 作者 Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer, Small, 2017, 第 8 作者 Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nanocrossbar memory array, Nano Research, 2017, 第 6 作者