何红宇 - 南华大学 - 电气工程学院

个人简介

何红宇,华中科技大学电子科学与技术专业本科毕业；华中科技大学微电子学与固体电子学专业硕士毕业；华南理工大学微电子学与固体电子学专业博士毕业；北京大学博士后。

研究领域

半导体器件物理，集成电路设计

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1]HongyuHe,etal,AnalyticaldraincurrentmodelforamorphousInGaZnOthin-filmtransistorsatdifferenttemperaturesconsideringbothdeepandtailtrapstates,IEEETransactionsonElectronDevices,2017,64(9):3654-3660 [2]HongyuHe,etal,Analyticaldraincurrentmodelfororganicthin-filmtransistorsatdifferenttemperaturesconsideringbothdeepandtailtrapstates,IEEETransactionsonElectronDevices,2016,63(11):4423-4431 [3]HongyuHe,etal,Above-threshold1/fnoiseexpressionforamorphousInGaZnOthin-filmtransistorsconsideringseriesresistancenoise,IEEEElectronDeviceLetters,2015,36(10):1056-1059 [4]HongyuHe,etal,1/fnoiseexpressionsforamorphousInGaZnOTFTsconsideringmobilitypower-lawparameterinabove-thresholdregime,IEEEElectronDeviceLetters,2015,36(2):156-158 [5]HongyuHe,etal,Trapped-charge-effect-basedabove-thresholdcurrentexpressionsforamorphoussiliconTFTsconsistentwithPao-Sahmodel.IEEETransactionsonElectronDevices,2014,61(11):3744-3750 [6]HongyuHe,etal,Polynomial-effective-channel-mobility-basedabove-thresholdcurrentmodelforundopedpolycrystalline-siliconthin-filmtransistorsconsistentwithPao-Sahmodel,IEEETransactionsonElectronDevices,2012,59(11):3130-3132 [7]HongyuHe,etal,Analyticalexpressionsfordopedpolycrystallinesiliconthin-filmtransistorsinabove-thresholdregimeconsistentwithPao-Sahmodelconsideringtrappedchargeeffect,IEEETransactionsonElectronDevices,2011,58(12):4324-4332 [8]HongyuHe,etal,Analyticalmodelofundopedpolycrystallinesiliconthin-filmtransistorsconsistentwithPao-Sahmodel,IEEETransactionsonElectronDevices,2011,58(4):1102-1107