陈之战 - 上海师范大学

研究领域

研究方向（1）碳化硅晶体生长研究（2）碳化硅光电器件研究（3）半导体器件仿真

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[1]赵振宇,陈之战,石旺舟.Aninvestigationofterahertzresponseinmonocrystalline6H-SiCforelectro-opticsampling.JAPANESEJOURNALOFAPPLIEDPHYSICSPART1-REGULARPAPERSSHORTNOTES&REV,2014,53(02):022601-1~022601-6. [2]罗从文,赵振宇,石旺舟,陈之战.Aninvestigationonterahertzresponseinelectro-opticcrystalsexcitedat1.03μmwavelength.CHINESESCIENCEBULLETIN,2014,59(11):1187-1191. [3]罗从文,赵振宇,闫爱民,胡志娟,石旺舟,陈之战.掺镱飞秒脉冲激光激发DAST晶体产生THz谱的可行性研究.华东师范大学学报.自然科学版,2014,4(4):88~93. [4]Yong-PingZhang,陈之战,卢吴越,谈嘉惠,程越,石旺舟.Effectofadditionalsiliconontitanium/4H-SiCcontactsproperties.CHINESEPHYSICSB,2014,23(5):057303. [5]Jia-HuiTan,陈之战,LuWuyue,ChengYue,HeHong,LiuYihong,SunYujun,ZhaoGaojie.Fabricationofuniform4H-SiCmesoporesbypulsedelectrochemicaletching.NANOSCALERESEARCHLETTERS,2014,9(9):570. [6]陈之战,张永平,卢吴越,程越,谈嘉慧.锌铬尖晶石水热合成及形成机理研究.人工晶体学报,2014,43(2):355-360. [7]谈嘉慧,陈之战,张永平,何鸿.n型Si侧蚀的电学机理研究.功能材料与器件学报,2014,20(1):31-36. [8]张永平,陈之战,程越,卢吴越,谈嘉慧,赵高杰,刘益宏,孙玉俊,石旺舟,李万荣,陆逸枫.光刻图形转移技术.上海师范大学学报自然科学版,2014,43(2):132-136. [9]程越,陈之战.Effectoftheannealingtemperatureonthelong-termthermalstabilityofPt/Si/Ta/Ti/4H–SiCcontacts.CHINESEPHYSICSB,2015,24(10):107303. [10]张永平,陈之战.激光触发能量对横向结构4H-SiC光导开关导通电阻的影响.强激光与粒子束,2015,27(5):055003. [11]童武林,陈之战.4H-SiC肖特基二极管载流子输运的温度效应.上海师范大学学报自然科学版,2015,44(4):430-434. [12]Shao-xiongLiu,陈之战.High-PerformanceofAlNanoparticleenhanced4H-SiCMSMPhotodiodesforDeepUltravioletDetection.IEEEELECTRONDEVICELETTERS,2017,38(10):1405-1408. [13]Yi-fengLu,陈之战.Effectsofannealingtreatmentonthehightemperatureperformanceof4H-SiCmetal-semiconductor-metalultravioletphotodiodes.MATERIALSSCIENCEINSEMICONDUCTORPROCESSING,2017,71(C):116-120. [14]程越,陈之战,卢吴越,王涛.FabricationofOhmiccontactonsemi-insulating4H-SiCsubstratebylaserthermalannealing.JOURNALOFAPPLIEDPHYSICS,2016,119(10):225705. [15]刘益宏,陈之战,孙玉俊,赵高杰,廖黎明,王涛.Crystalstructureinducedresidueformationon4H-SiCbyreactiveionetching.AIPADVANCES,2016,6(06):065219. [16]卢吴越,陈之战.不同退火方式对Ni/SiC接触界面性质的影响.物理学报,2015,64(6):067303.