邓婉玲 - 暨南大学 - 信息科学技术学院/网络空间安全学院

个人简介

教育背景 1999.9-2003.7 华南理工大学电子科学与技术本科 2003.9-2008.6 华南理工大学微电子学与固体电子学硕博连读研究生获博士学位工作经历 2008.7 - 现在暨南大学信息科学技术学院电子工程系讲师、副教授 2014.7 – 2015.7 美国中佛罗里达大学电子工程系访问学者

研究领域

半导体器件模型

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] Wanling Deng, Junkai Huang, Xiaoyu Ma, Juin J. Liou, Fei Yu. A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands. Solid-State Electronics, 2016，115： 54–59. [2] Xiaoyu Ma, Junkai Huang, Jielin Fang, Wanling Deng*. A compact model of the reverse gate-leakage current in GaN-based HEMTs. Solid-State Electronics， 2016，126 ：10–13 [3] Wanling Deng, Junkai Huang, Xiaoyu Ma, Juin J. Liou. An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs. IEEE Electron Device Letters, 2015, 36(2): 108-110. [4] Wanling Deng, Junkai Huang, Xiaoyu Ma, Tao Ning. An explicit surface-potential-based model for amorphous IGZO thin-film transistors including both tail and deep states. IEEE Electron Device Letters, 2014, 35(1): 78-80. [5] Wanling Deng, Junkai Huang, Xiyue Li. Surface-Potential-Based Drain Current Model of Polysilicon TFTs With Gaussian and Exponential DOS Distribution. IEEE Trans. Electron Devices, 2012, 59(1): 94-100. [6] Wanling Deng, Junkai Huang. A Physics-Based Approximation for the Polysilicon Thin-Film Transistors Surface Potential. IEEE Electron Device Letters, 2011,32(5): 647-649