通过原子层沉积获得的织构 Sc2O3 薄膜的光学性质和电荷传输,Applied Surface Science

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通过原子层沉积获得的织构 Sc2O3 薄膜的光学性质和电荷传输
Applied Surface Science ( IF 6.3 ) Pub Date : 2019-06-01 , DOI: 10.1016/j.apsusc.2019.01.288
M.S. Lebedev , V.N. Kruchinin , M.Yu. Afonin , I.V. Korolkov , A.A. Saraev , A.A. Gismatulin , V.A. Gritsenko

摘要使用三（甲基环戊二烯基）钪 (III) Sc(MeCp)3 和水蒸气作为前驱体，在 200-400 °C 的反应器温度范围内，通过原子层沉积 (ALD) 沉积厚度为 d = 20-100 nm 的氧化钪薄膜. 在 230–370 °C 的范围内检测到 ALD 窗口。每个周期的生长保持不变，在这个范围内为 0.080-0.084 nm/周期。发现 O/Sc 比率为 1.49，接近化学计量的 Sc2O3。薄膜是多晶的。对于在较高温度下生长的薄膜，晶粒更明显。晶粒尺寸随厚度增加。立方 Sc2O3 相由 FTIR、拉曼光谱和 X 射线衍射确定。一般来说，不同的结晶方向对不同的工艺条件更有利。薄膜有纹理，它们的生长主要发生在（400）方向。柯西模型很好地描述了沉积膜的折射率色散。光学特性与工艺参数（温度或厚度）的相关性很弱。正如检测到的厚度接近的薄膜一样，折射率随着沉积温度的升高而略微增加。Nasyrov-Gritsenko (NG) 多声子陷阱电离模型很好地描述了电荷传输。陷阱参数确定为：浓度 N = 1.5 × 1019 cm-3，热能 Wt = 0.83 eV，光能 Wopt = 1.66 eV。正如检测到的厚度接近的薄膜一样，折射率随着沉积温度的升高而略微增加。Nasyrov-Gritsenko (NG) 多声子陷阱电离模型很好地描述了电荷传输。陷阱参数确定为：浓度 N = 1.5 × 1019 cm-3，热能 Wt = 0.83 eV，光能 Wopt = 1.66 eV。正如检测到的厚度接近的薄膜一样，折射率随着沉积温度的升高而略微增加。Nasyrov-Gritsenko (NG) 多声子陷阱电离模型很好地描述了电荷传输。陷阱参数确定为：浓度 N = 1.5 × 1019 cm-3，热能 Wt = 0.83 eV，光能 Wopt = 1.66 eV。

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Optical properties and charge transport of textured Sc2O3 thin films obtained by atomic layer deposition

Abstract Scandium oxide films with thickness d = 20–100 nm were deposited by atomic layer deposition (ALD) using tris(methylcyclopentadienyl) scandium (III) Sc(MeCp)3 and water vapors as precursors at reactor temperature range of 200–400 °C. The ALD-window was detected in the range of 230–370 °C. Growth per cycle remained constant and was 0.080–0.084 nm/cycle in this range. O/Sc ratio was found to be 1.49 which is close to stoichiometric Sc2O3. The films were polycrystalline. The grains were more apparent for the films grown at higher temperatures. The grain size increased with thickness. Cubic Sc2O3 phase was determined by FTIR, Raman spectroscopy and X-rays diffraction. In general, different crystallographic directions are more preferential for different process conditions. Films were textured and their growth occurred mainly in the (400) direction. The refractive index dispersions of deposited films were well described by the Cauchy model. Optical properties depended weakly on process parameters (temperature or thickness). As it was detected for the films with close thickness the refractive index slightly increased with deposition temperature increase. The Nasyrov-Gritsenko (N-G) multiphonon trap ionization model well describes the charge transport. The trap parameters were determined to be: concentration N = 1.5 × 1019 cm−3, thermal energy Wt = 0.83 eV, and optical energy Wopt = 1.66 eV.

更新日期：2019-06-01

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