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Engineering Point-Defect States in Monolayer WSe2
ACS Nano ( IF 15.8 ) Pub Date : 2019-01-28 00:00:00 , DOI: 10.1021/acsnano.8b07595 Chendong Zhang 1, 2 , Cong Wang 3 , Feng Yang 3 , Jing-Kai Huang 4 , Lain-Jong Li 4 , Wang Yao 5 , Wei Ji 3 , Chih-Kang Shih 2
ACS Nano ( IF 15.8 ) Pub Date : 2019-01-28 00:00:00 , DOI: 10.1021/acsnano.8b07595 Chendong Zhang 1, 2 , Cong Wang 3 , Feng Yang 3 , Jing-Kai Huang 4 , Lain-Jong Li 4 , Wang Yao 5 , Wei Ji 3 , Chih-Kang Shih 2
Affiliation
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Defect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on–off switching by the odd–even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.
中文翻译：
单层WSe 2中的工程点缺陷状态
缺陷工程是定制新兴的二维半导体特性的一种关键方法。在这里，我们报告了单层WSe 2中W空位的原子工程由单个钾原子装饰。K修饰会改变能量状态并重塑波函数，从而使先前隐藏的中间能隙状态在扫描隧道光谱学中通过良好解析的多重峰变得可见。它们的能级与第一性原理计算非常吻合。更有趣的是，计算表明，由K原子捐赠的未配对电子会导致局部磁矩，表现为电子填充的奇偶数进行开-关切换。在实验上，费米能级被钉扎在归因于石墨衬底的所有缺陷状态之上，对应于关闭状态。另一方面，在关闭状态下理论与实验之间的紧密一致性表明在缺陷处进行栅极可编程磁矩的可能性。
更新日期：2019-01-28
中文翻译：
单层WSe 2中的工程点缺陷状态
缺陷工程是定制新兴的二维半导体特性的一种关键方法。在这里，我们报告了单层WSe 2中W空位的原子工程由单个钾原子装饰。K修饰会改变能量状态并重塑波函数，从而使先前隐藏的中间能隙状态在扫描隧道光谱学中通过良好解析的多重峰变得可见。它们的能级与第一性原理计算非常吻合。更有趣的是，计算表明，由K原子捐赠的未配对电子会导致局部磁矩，表现为电子填充的奇偶数进行开-关切换。在实验上，费米能级被钉扎在归因于石墨衬底的所有缺陷状态之上，对应于关闭状态。另一方面，在关闭状态下理论与实验之间的紧密一致性表明在缺陷处进行栅极可编程磁矩的可能性。
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