Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation,Nano Letters

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Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation
Nano Letters ( IF 9.6 ) Pub Date : 2019-01-24 00:00:00 , DOI: 10.1021/acs.nanolett.8b04420
Dingkun Ren ₁ , Khalifa M. Azizur-Rahman ₂ , Zixuan Rong ₁ , Bor-Chau Juang ₁ , Siddharth Somasundaram ₁ , Mohammad Shahili ₁ , Alan C. Farrell ₁ , Benjamin S. Williams _{1,

3} , Diana L. Huffaker _{1,

2,

3}

Affiliation

Developing uncooled photodetectors at midwavelength infrared (MWIR) is critical for various applications including remote sensing, heat seeking, spectroscopy, and more. In this study, we demonstrate room-temperature operation of nanowire-based photodetectors at MWIR composed of vertical selective-area InAsSb nanowire photoabsorber arrays on large bandgap InP substrate with nanoscale plasmonic gratings. We accomplish this by significantly suppressing the nonradiative recombination at the InAsSb nanowire surfaces by introducing ex situ conformal Al₂O₃ passivation shells. Transient simulations estimate an extremely low surface recombination velocity on the order of 10³ cm/s. We further achieve room-temperature photoluminescence emission from InAsSb nanowires, spanning the entire MWIR regime from 3 to 5 μm. A dry-etching process is developed to expose only the top nanowire facets for metal contacts, with the sidewalls conformally covered by Al₂O₃ shells, allowing for a higher internal quantum efficiency. Based on these techniques, we fabricate nanowire photodetectors with an optimized pitch and diameter and demonstrate room-temperature spectral response with MWIR detection signatures up to 3.4 μm. The results of this work indicate that uncooled focal plane arrays at MWIR on low-cost InP substrates can be designed with nanostructured absorbers for highly compact and fully integrated detection platforms.

中文翻译：

具有Al ₂ O ₃钝化的室温中波长红外InAsSb纳米线光电探测器阵列

开发中波长红外（MWIR）非冷却光电探测器对于包括遥感，寻热，光谱学等在内的各种应用至关重要。在这项研究中，我们展示了在纳米带等离子光栅的大带隙InP衬底上由垂直选择区域InAsSb纳米线光吸收体阵列组成的MWIR处基于纳米线的光电探测器的室温操作。我们通过引入异位保形Al ₂ O ₃钝化壳来显着抑制InAsSb纳米线表面的非辐射复合来实现这一目标。瞬态仿真估计极低的表面重组速度约为10 ³厘米/秒我们进一步实现了InAsSb纳米线的室温光致发光发射，涵盖了从3到5μm的整个MWIR范围。开发了干法蚀刻工艺以仅暴露用于金属接触的顶部纳米线刻面，其侧壁被Al ₂ O ₃壳保形地覆盖，从而允许更高的内部量子效率。基于这些技术，我们制造出具有最佳间距和直径的纳米线光电探测器，并通过具有高达3.4μm的MWIR检测特征证明了室温光谱响应。这项工作的结果表明，可以使用纳米结构的吸收体设计低成本InP基板上MWIR处的非冷却焦平面阵列，以实现高度紧凑和完全集成的检测平台。

更新日期：2019-01-24

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