A substrate-enhanced MoS2 photodetector through a dual-photogating effect†,Materials Horizons

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A substrate-enhanced MoS2 photodetector through a dual-photogating effect†
Materials Horizons ( IF 12.2 ) Pub Date : 2019-01-24 00:00:00 , DOI: 10.1039/c8mh01429a
Ke Zhang _{1,

2,

2,

3,

4} , Mingzeng Peng _{1,

2,

2,

3,

4} , Aifang Yu _{1,

2,

2,

3,

4} , Youjun Fan _{1,

2,

2,

3,

4} , Junyi Zhai _{1,

2,

2,

3,

4} , Zhong Lin Wang _{1,

2,

2,

3,

4}

Affiliation

The high-performance, miniaturization and flexibility of two-dimensional (2D) material-based electronics and optoelectronics make them promising substitutes for silicon-based devices in the future. However, the complex structures and the assistance strategies needed to compensate for the intrinsic deficiencies of 2D materials are major challenges hindering practical applications. It is hoped to achieve high-performance 2D material-based devices of the simplest construction without external assistance. Therefore, making full use of the basic components (host material, substrate and electrode) of 2D devices is crucial. To date, the role of the substrate has always been ignored. Here, we choose undoped-silicon carbon (SiC) and Kapton (polyimide, PI) film as substrates for MoS₂ photodetectors (PDs) for rigid and flexible applications, respectively. A new concept, the “dual-photogating effect” induced at the MoS₂/substrate interface, is proposed and applied to obtain ultra-high photoresponse performance, such as high photoresponsivity of ∼10⁴ A W⁻¹ in MoS₂/SiC PD and an on/off ratio of ∼10⁵ in a MoS₂/Kapton PD.

中文翻译：

通过双重光控效应增强了衬底的MoS ₂光电探测器†

二维（2D）基于材料的电子产品和光电产品的高性能，小型化和灵活性使其成为未来基于硅的设备的有希望的替代品。但是，复杂的结构和弥补2D材料固有缺陷所需的辅助策略是阻碍实际应用的主要挑战。希望在没有外部帮助的情况下实现结构最简单的高性能基于2D材料的设备。因此，充分利用2D设备的基本组件（主体材料，基板和电极）至关重要。迄今为止，基材的作用一直被忽略。在这里，我们选择未掺杂的硅碳（SiC）和Kapton（聚酰亚胺，PI）薄膜作为MoS _2的衬底分别用于刚性和柔性应用的光电探测器（PD）。提出了一个新的概念，即在MoS ₂ /衬底界面处引起的“双重光致化效应” ，并将其应用于获得超高的光响应性能，例如在MoS ₂ / SiC PD和硅中获得约10 ⁴ AW ^-1的高光响应性。MoS ₂ / Kapton PD的开/关比约为^{10 5}。

更新日期：2019-01-24

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