Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure,ACS Applied Materials & Interfaces

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Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-01-21 00:00:00 , DOI: 10.1021/acsami.8b18860
Seung-Hwan Kim , Kyu Hyun Han , Gwang-Sik Kim , Seung-Geun Kim , Jiyoung Kim ₁ , Hyun-Yong Yu

Affiliation

Schottky barrier height (SBH) engineering of contact structures is a primary challenge to achieve high performance in nanoelectronic and optoelectronic applications. Although SBH can be lowered through various Fermi-level (FL) unpinning techniques, such as a metal/interlayer/semiconductor (MIS) structure, the room for contact metal adoption is too narrow because the work function of contact metals should be near the conduction band edge (CBE) of the semiconductor to achieve low SBH. Here, we propose a novel structure, the metal/transition metal dichalcogenide/semiconductor structure, as a contact structure that can effectively lower the SBH with wide room for contact metal adoption. A perpendicularly integrated molybdenum disulfide (MoS₂) interlayer effectively alleviates FL pinning by reducing metal-induced gap states at the MoS₂/semiconductor interface. Additionally, it can induce strong FL pinning of contact metals near its CBE at the metal/MoS₂ interface. The technique using FL pinning and unpinning at metal/MoS₂/semiconductor interfaces is first introduced in the MIS scheme to allow the use of various contact metals. Consequently, significant reductions of the SBH from 0.48 to 0.12 eV for GaAs and from 0.56 to 0.10 eV for Ge are achieved with several different contact metals. This work significantly reduces the dependence on contact metals with lowest SBH and proposes a new way of overcoming current severe contact issues for future nanoelectronic and optoelectronic applications.

中文翻译：

利用MoS ₂中间层界面特性对接触结构进行肖特基势垒高度调制

接触结构的肖特基势垒高度（SBH）工程是在纳米电子和光电应用中实现高性能的主要挑战。尽管可以通过多种费米能级（FL）解锁技术（例如金属/中间层/半导体（MIS）结构）来降低SBH，但由于接触金属的功函应接近导电，因此采用接触金属的空间过窄。半导体的边沿（CBE）来实现低SBH。在这里，我们提出了一种新颖的结构，即金属/过渡金属二硫化二氢/半导体结构，作为一种可以有效降低SBH的接触结构，并为采用接触金属提供了广阔空间。垂直整合的二硫化钼（MoS ₂中间层通过减少MoS ₂ /半导体界面处的金属引起的间隙状态来有效地缓解FL钉扎现象。此外，它会在金属/ MoS ₂界面的CBE附近引起接触金属的强烈FL钉扎。首次在MIS方案中引入了在金属/ MoS ₂ /半导体接口处使用FL钉扎和取消钉扎的技术，以允许使用各种接触金属。因此，使用几种不同的接触金属，可使GaAs的SBH从0.48降至0.12 eV，而Ge的从0.56降至0.10 eV。这项工作大大降低了对具有最低SBH的接触金属的依赖，并提出了一种新的方法来克服当前严重的接触问题，以用于未来的纳米电子和光电应用。

更新日期：2019-01-21

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