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Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-01-18 , DOI: 10.1002/adfm.201807672 Weixin Ouyang 1 , Feng Teng 2 , Jr-Hau He 3 , Xiaosheng Fang 1
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2019-01-18 , DOI: 10.1002/adfm.201807672 Weixin Ouyang 1 , Feng Teng 2 , Jr-Hau He 3 , Xiaosheng Fang 1
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Semiconductor‐based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge‐carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via charge‐carrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.
中文翻译：
通过电荷载流子工程提高基于金属氧化物半导体的光电探测器的光电性能
基于半导体的光电探测器（PD）通过光电效应将光信号转换为电信号，这涉及光感应电荷载流子的产生，分离和传输，以及将这些电荷载流子提取到外部电路。由于其特定的电子和光电特性，金属氧化物半导体被广泛用于光电设备中。然而，在增强光响应与减少上升/衰减时间之间的折衷限制了基于金属氧化物半导体的PD的实际应用。由于电荷载流子的行为在这些PD的光电转换过程中起着重要作用，因此研究人员提出了几种策略，包括修改光吸收，设计新颖的PD异质结构，构造特定的几何形状，并采用特定的电极配置来调节电荷载流子的行为并改善相关PD的光电性能。这篇综述旨在介绍和总结有关通过电荷载流子工程提高基于金属氧化物半导体的局部放电的光电性能的最新研究，并在最后一部分中为这些局部放电的未来发展提出了可能的机会和方向。
更新日期：2019-01-18
中文翻译：
通过电荷载流子工程提高基于金属氧化物半导体的光电探测器的光电性能
基于半导体的光电探测器（PD）通过光电效应将光信号转换为电信号，这涉及光感应电荷载流子的产生，分离和传输，以及将这些电荷载流子提取到外部电路。由于其特定的电子和光电特性，金属氧化物半导体被广泛用于光电设备中。然而，在增强光响应与减少上升/衰减时间之间的折衷限制了基于金属氧化物半导体的PD的实际应用。由于电荷载流子的行为在这些PD的光电转换过程中起着重要作用，因此研究人员提出了几种策略，包括修改光吸收，设计新颖的PD异质结构，构造特定的几何形状，并采用特定的电极配置来调节电荷载流子的行为并改善相关PD的光电性能。这篇综述旨在介绍和总结有关通过电荷载流子工程提高基于金属氧化物半导体的局部放电的光电性能的最新研究，并在最后一部分中为这些局部放电的未来发展提出了可能的机会和方向。
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