当前位置：
X-MOL 学术
›
ACS Photonics
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
ACS Photonics ( IF 6.5 ) Pub Date : 2019-01-09 00:00:00 , DOI: 10.1021/acsphotonics.8b01675 Enping Wu 1 , Di Wu 1 , Cheng Jia 1 , Yuange Wang 1 , Huiyu Yuan 2 , Longhui Zeng 3 , Tingting Xu 1 , Zhifeng Shi 1 , Yongtao Tian 1 , Xinjian Li 1
ACS Photonics ( IF 6.5 ) Pub Date : 2019-01-09 00:00:00 , DOI: 10.1021/acsphotonics.8b01675 Enping Wu 1 , Di Wu 1 , Cheng Jia 1 , Yuange Wang 1 , Huiyu Yuan 2 , Longhui Zeng 3 , Tingting Xu 1 , Zhifeng Shi 1 , Yongtao Tian 1 , Xinjian Li 1
Affiliation
|
The high-performance broadband photodetectors have attracted intensive scientific interests due to their potential applications in optoelectronic systems. Despite great achievements in two-dimensional (2D) materials based photodetectors such as graphene and black phosphorus, obvious disadvantages such as low optical absorbance and instability preclude their usage for the broadband photodetectors with the desired performance. An alternative approach is to find promising 2D materials and fabricate heterojunction structures for multifunctional hybrid photodetectors. In this work, 2D WS2/Si heterojunction with a type-II band alignment is formed in situ. This heterojunction device produced a high Ion/Ioff ratio over 10,6 responsivity of 224 mA/W, specific detectivity of 1.5 × 1012 Jones, high polarization sensitivity, and broadband response up to 3043 nm. Furthermore, a 4 × 4 device array of WS2/Si heterojunction device is demonstrated with high stability and reproducibility. These results suggest that the WS2/Si type-II heterojunction is an ideal photodetector in broadband detection and integrated optoelectronic system.
中文翻译：
用于响应高达中红外的自供电宽带光电探测器的2D WS 2 / Si II型异质结的原位制造
高性能宽带光电探测器由于在光电系统中的潜在应用而吸引了广泛的科学兴趣。尽管在基于二维（2D）材料的光电探测器（例如石墨烯和黑磷）方面取得了巨大成就，但是明显的缺点（例如低的光吸收率和不稳定性）使它们无法用于具有所需性能的宽带光电探测器。一种替代方法是找到有前途的2D材料并制造用于多功能混合光电探测器的异质结结构。在这项工作中，原位形成具有II型能带对准的2D WS 2 / Si异质结。此异质结器件产生的高我上/我关闭超过10比，6灵敏度为224 mA / W，比检测率为1.5×10 12 Jones，极化灵敏度高，宽带响应高达3043 nm。此外，证明了具有高稳定性和可再现性的WS 2 / Si异质结器件的4×4器件阵列。这些结果表明，WS 2 / Si II型异质结是宽带检测和集成光电系统中的理想光电探测器。
更新日期：2019-01-09
中文翻译：
用于响应高达中红外的自供电宽带光电探测器的2D WS 2 / Si II型异质结的原位制造
高性能宽带光电探测器由于在光电系统中的潜在应用而吸引了广泛的科学兴趣。尽管在基于二维（2D）材料的光电探测器（例如石墨烯和黑磷）方面取得了巨大成就，但是明显的缺点（例如低的光吸收率和不稳定性）使它们无法用于具有所需性能的宽带光电探测器。一种替代方法是找到有前途的2D材料并制造用于多功能混合光电探测器的异质结结构。在这项工作中，原位形成具有II型能带对准的2D WS 2 / Si异质结。此异质结器件产生的高我上/我关闭超过10比，6灵敏度为224 mA / W，比检测率为1.5×10 12 Jones，极化灵敏度高，宽带响应高达3043 nm。此外，证明了具有高稳定性和可再现性的WS 2 / Si异质结器件的4×4器件阵列。这些结果表明，WS 2 / Si II型异质结是宽带检测和集成光电系统中的理想光电探测器。
京公网安备 11010802027423号