Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System,Nano Letters

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Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System
Nano Letters ( IF 9.6 ) Pub Date : 2019-01-04 00:00:00 , DOI: 10.1021/acs.nanolett.8b04023
Byung Chul Jang ₁ , Sungkyu Kim ₂ , Sang Yoon Yang ₁ , Jihun Park ₁ , Jun-Hwe Cha ₁ , Jungyeop Oh ₁ , Junhwan Choi ₃ , Sung Gap Im ₃ , Vinayak P. Dravid ₂ , Sung-Yool Choi ₁

Affiliation

With the advent of artificial intelligence (AI), memristors have received significant interest as a synaptic building block for neuromorphic systems, where each synaptic memristor should operate in an analog fashion, exhibiting multilevel accessible conductance states. Here, we demonstrate that the transition of the operation mode in poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based flexible memristor from conventional binary to synaptic analog switching can be achieved simply by reducing the size of the formed filament. With the quantized conductance states observed in the flexible pV3D3 memristor, analog potentiation and depression characteristics of the memristive synapse are obtained through the growth of atomically thin Cu filament and lateral dissolution of the filament via dominant electric field effect, respectively. The face classification capability of our memristor is evaluated via simulation using an artificial neural network consisting of pV3D3 memristor synapses. These results will encourage the development of soft neuromorphic intelligent systems.

中文翻译：

具原子级导电丝的聚合物模拟忆阻突触，用于灵活的神经形态计算系统

随着人工智能（AI）的出现，忆阻器作为神经形态系统的突触构建基块已引起了极大的兴趣，其中每个突触忆阻器应以模拟方式运行，表现出多级可访问的电导状态。在这里，我们证明了基于聚（1,3,5-三乙烯基-1,3,5-三甲基环三硅氧烷）（pV3D3）的柔性忆阻器从传统的二进制到突触模拟切换的操作模式可以简单地实现减小形成的细丝的尺寸。通过在柔性pV3D3忆阻器中观察到量化的电导状态，分别通过原子上薄的Cu细丝的生长和通过主导电场效应使细丝的侧向溶解分别获得了忆阻突触的模拟增强和抑制特性。我们使用由pV3D3忆阻器突触组成的人工神经网络通过仿真评估了忆阻器的面部分类能力。这些结果将鼓励软神经形态智能系统的发展。

更新日期：2019-01-04

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