The effective manipulation of excitons is important for the realization of exciton-based devices and circuits, and doping is considered a good strategy to achieve this. While studies have shown that 2D semiconductors are ideal for excitonic devices, preparation of homogenous substitutional foreign-atom-doped 2D crystals is still difficult. Here we report the preparation of homogenous monolayer Sb-doped MoS₂ single crystals via a facile chemical vapor deposition method. A and B excitons are observed in the Sb-doped MoS₂ monolayer by reflection magnetic circular dichroism spectrum measurements. More important, compared with monolayer MoS₂, the peak positions of two excitons show obvious shifts. Meanwhile, the degeneration of A exciton is also observed in the monolayer Sb-doped MoS₂ crystal using photoluminescence spectroscopy, which is ascribed to the impurity energy levels within the band-gap, confirmed by density function theory. Our study opens a door to developing the doping of 2D layered transition metal dichalcogenides with group-V dopants, which is helpful for the fundamental study of the physical and chemical properties of transition metal dichalcogenides.

激子的有效操纵对于基于激子的器件和电路的实现很重要，而掺杂被认为是实现这一目标的好策略。虽然研究表明2D半导体是激子器件的理想选择，但是制备均质替代异质原子掺杂的2D晶体仍然很困难。在这里，我们报告通过一种简便的化学气相沉积方法制备均质单层掺Sb的MoS ₂单晶。通过反射磁性圆二色性光谱测量，在掺Sb的MoS ₂单层中观察到A和B激子。与单层MoS ₂相比，更重要，两个激子的峰位显示出明显的偏移。同时，在单层掺杂Sb的MoS ₂晶体中，利用光致发光光谱也观察到了A激子的退化，这归因于带隙内的杂质能级，这通过密度泛函理论得到了证实。我们的研究为开发使用V型掺杂剂掺杂2D层状过渡金属二硫金属化合物打开了一扇门，这有助于对过渡金属二硫金属化合物的物理和化学性质进行基础研究。