2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification,Advanced Electronic Materials

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2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-12-27 , DOI: 10.1002/aelm.201800745
Geonyeop Lee ₁ , Stephen J. Pearton ₂ , Fan Ren ₃ , Jihyun Kim ₁

Affiliation

The heterojunction bipolar transistor (HBT) differs from the classical homojunction bipolar junction transistor in that each emitter‐base‐collector layer is composed of a different semiconductor material. 2D material (2DM)‐based heterojunctions have attracted attention because of their wide range of fundamental physical and electrical properties. Moreover, strain‐free heterostructures formed by van der Waals interaction allows true bandgap engineering regardless of the lattice constant mismatch. These characteristics make it possible to fabricate high‐performance heterojunction devices such as HBTs, which have been difficult to implement in conventional epitaxy. Herein, NPN double HBTs (DHBTs) are constructed from vertically stacked 2DMs (n‐MoS₂/p‐WSe₂/n‐MoS₂) using dry transfer technique. The formation of the two P–N junctions, base‐emitter, and base‐collector junctions, in DHBTs, was experimentally observed. These NPN DHBTs composed of 2DMs showed excellent electrical characteristics with highly amplified current modulation. These results are expected to extend the application field of heterojunction electronic devices based on various 2DMs.

中文翻译：

具有高电流放大率的基于2D材料的垂直双异质结双极晶体管

异质结双极晶体管（HBT）与经典的同质双极结晶体管的不同之处在于，每个发射极-基极-集电极层均由不同的半导体材料组成。基于2D材料（2DM）的异质结由于其广泛的基本物理和电气特性而备受关注。此外，由范德华相互作用形成的无应变异质结构可实现真正的带隙工程设计，而与晶格常数不匹配无关。这些特性使制造高性能异质结器件（例如HBT）成为可能，而这些异质结器件在常规外延中难以实现。在此，NPN双HBT（DHBT）由垂直堆叠的2DM（n-MoS ₂ / p-WSe ₂ / n-MoS ₂）使用干式转移技术。通过实验观察到了DHBT中两个PN结，基极-发射极和基极-集电极结的形成。这些由2DM组成的NPN DHBT具有出色的电气特性，并具有高度放大的电流调制。这些结果有望扩展基于各种2DM的异质结电子设备的应用领域。

更新日期：2018-12-27

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