Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition,Advanced Materials

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Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition
Advanced Materials ( IF 27.4 ) Pub Date : 2016-03-16 , DOI: 10.1002/adma.201504760
Xuesong Li ₁ , Luigi Colombo ₂ , Rodney S. Ruoff ₃

Affiliation

Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production‐worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large‐area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large‐area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large‐area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed.

中文翻译：

化学气相沉积法在铜箔上合成石墨烯薄膜

在过去的十年中，石墨烯已迅速发展成为改变人类生活的最有希望的材料之一。开发可用于制备各种类型石墨烯的有价值的合成方法，构成了其研究和应用的基础。石墨烯可以以微片状粉末或大面积薄膜的形式使用。石墨烯粉是通过剥落石墨或还原氧化石墨烯来制备的，而石墨烯膜则主要是通过化学气相沉积（CVD）在各种基材上制备的。已经探索了金属和介电衬底。尽管介电基板比其他任何基板都更受青睐，但在诸如Cu的金属基板上已经生长了质量更高的石墨烯大面积薄膜。

更新日期：2016-03-16

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