Ferromagnetic, Ferroelectric, and Optical Modulated Multiple Resistance States in Multiferroic Tunnel Junctions,ACS Applied Materials & Interfaces

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Ferromagnetic, Ferroelectric, and Optical Modulated Multiple Resistance States in Multiferroic Tunnel Junctions
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-12-18 00:00:00 , DOI: 10.1021/acsami.8b18727
Li Yin ₁ , Xiaocha Wang ₂ , Wenbo Mi ₁

Affiliation

In data storage devices, spin, ferroelectric, or optical indices have been utilized as information carriers, and the binate couplings among the three parameters are explored to increase the resistance states and resultant data-density. However, studies holding all of the three information indices are still blank, where the increasing number of information carriers from previous two to three provides opportunities for inducing novel phenomena and distinct resistance states. In this work, using the spin–electron–photon resolved theory, we demonstrate the feasibility of spin, ferroelectric, and optical interactions, which are further detected by a spin- and ferroelectric-modulated photovoltaic effect in La_2/3Sr_1/3MnO₃/BiFeO₃/Fe₄N multiferroic tunnel junctions (MFTJs). Moreover, based on the spin- and ferroelectric-induced four resistance states in MFTJs, the special photovoltaic effect shall split each resistance state into light-on and light-off switching states, which finally lead to multiple resistance states. Besides, nearly 100% spin-polarized photocurrent and large tunneling magnetoresistance (electroresistance) are realized in these MFTJs. These results reveal that interacted spin, ferroelectric, and optical indices can simultaneously serve as information carriers in storage devices, which provide guidance for developing efficient data memories.

中文翻译：

多铁隧道连接中的铁磁，铁电和光调制多电阻状态

在数据存储设备中，自旋，铁电或光学折射率已被用作信息载体，并且探索了这三个参数之间的二进位耦合以增加电阻状态和所得数据密度。但是，关于所有三个信息指标的研究仍然是空白的，其中信息载体的数量从前两个增加到三个，这提供了引发新颖现象和独特抵抗状态的机会。在这项工作中，使用自旋-电子-光子分辨理论，我们证明了自旋，铁电和光学相互作用的可行性，这在La _2/3 Sr _1/3中由自旋和铁电调制的光伏效应进一步检测到MnO ₃ / BiFeO ₃ / Fe₄ N多铁性隧道结（MFTJ）。此外，基于MFTJ中自旋和铁电感应的四个电阻状态，特殊的光电效应会将每个电阻状态分为开通和关断转换状态，最终导致多个电阻状态。此外，在这些MFTJ中实现了近100％的自旋极化光电流和大的隧穿磁阻（电阻）。这些结果表明，相互作用的自旋，铁电和光学指数可以同时充当存储设备中的信息载体，这为开发有效的数据存储器提供了指导。

更新日期：2018-12-18

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