Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films,Crystal Growth & Design

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Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2018-12-13 00:00:00 , DOI: 10.1021/acs.cgd.8b01542
Junhua Meng _{1,

2} , Bangming Ming ₃ , Xingwang Zhang _{1,

2} , Menglei Gao _{1,

2} , Likun Cheng ₁ , Zhigang Yin _{1,

2} , Denggui Wang _{1,

2} , Xingxing Li _{1,

2} , Jingbi You _{1,

2} , Ruzhi Wang ₃

Affiliation

Two-dimensional (2D) hexagonal boron nitride (h-BN) is considered as an ideal dielectric layer or substrate for other 2D heterostructure electronic devices. However, reported 2D h-BN films consist mostly of small sized and randomly oriented h-BN domains, resulting in a high density of grain boundaries during coalescence. Here, we report the growth of unidirectionally aligned h-BN domains in a large area on the Ni(111) epitaxial thin film on MgO(111) substrate by ion beam sputtering deposition. It is found that the in-plane orientation of the underlying Ni thin film, which can be controlled by its deposition temperature, plays a key role in the h-BN domain alignment. Furthermore, density functional theory calculations are performed to determine the favorable configuration of the triangular shaped h-BN domains on Ni(111). This work provides a promising approach to prepare unidirectionally aligned h-BN domains in a large area, and thus it is possible to achieve wafer-scale single crystal h-BN by stitching these h-BN domains.

中文翻译：

在单晶Ni（111）/ MgO薄膜上单向排列的六方氮化硼畴的受控生长

二维（2D）六方氮化硼（h-BN）被认为是其他2D异质结构电子设备的理想介电层或衬底。但是，已报道的二维h-BN薄膜主要由小尺寸且取向随机的h-BN域组成，导致在聚结过程中出现高密度的晶界。在这里，我们报告通过离子束溅射沉积在MgO（111）衬底上的Ni（111）外延薄膜上大面积单向排列的h-BN域的生长。发现可以通过其沉积温度控制的下面的Ni薄膜的面内取向在h-BN畴取向中起关键作用。此外，执行密度泛函理论计算以确定Ni（111）上的三角形h-BN域的有利构型。

更新日期：2018-12-13

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