HgTe/CdTe and HgSe/CdX (X = S, Se, and Te) Core/Shell Mid-Infrared Quantum Dots,Chemistry of Materials

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HgTe/CdTe and HgSe/CdX (X = S, Se, and Te) Core/Shell Mid-Infrared Quantum Dots
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-12-11 00:00:00 , DOI: 10.1021/acs.chemmater.8b04727
Guohua Shen ₁ , Philippe Guyot-Sionnest ₁

Affiliation

Mid-infrared core/shell quantum dots are synthesized starting with HgTe and HgSe cores which emit around 5 μm with interband and intraband transitions, respectively. HgTe/CdTe and HgSe/CdX (X = S, Se, and Te) are grown by colloidal atomic layer deposition at room temperature. HgSe/CdSe is also grown by hot-injection. For films of the core/shells, even a two-monolayer shell leads to a vastly improved stability against annealing, with no observable changes up to the alloying temperatures of ∼180 °C for HgTe/CdTe and ∼250 °C for HgSe/CdX. The improvement in the photoluminescence remains however small for all systems. In this study across interband and intraband emissions, the brightest emitter at 5 μm is the intraband transition of HgSe/CdSe with a quantum yield of ∼10^–3.

中文翻译：

HgTe / CdTe和HgSe / CdX（X = S，Se和Te）核/壳中红外量子点

中红外核/壳量子点是从HgTe和HgSe核开始合成的，HgTe和HgSe核分别发射约5μm的带间和带内跃迁。通过在室温下通过胶体原子层沉积来生长HgTe / CdTe和HgSe / CdX（X = S，Se和Te）。HgSe / CdSe也通过热注射生长。对于核/壳膜，即使是两层的壳也可以大大提高抗退火稳定性，在合金化温度HgTe / CdTe约180°C和HgSe / CdX约250°C时，没有观察到变化。。然而，对于所有系统，光致发光的改善仍然很小。在这项跨带内和带内发射的研究中，5μm处最亮的发射器是HgSe / CdSe的带内跃迁，量子产率约为10 ^–3。

更新日期：2018-12-11

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