Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs.

中文翻译：

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Si纳米晶体/ SiO2多层中的磷掺杂和具有与光通信兼容的波长的发光。

半导体中的掺杂是开发高性能器件的基本问题。但是，到目前为止，还没有完全了解Si纳米晶体（Si NCs）中的掺杂行为。在目前的工作中，制备了P掺杂的Si NCs / SiO 2多层。正如XPS和ESR测量所揭示的那样，P掺杂剂将优先钝化Si NCs的表面状态。同时，低温ESR光谱表明，一些P掺杂剂被替代地掺入Si NC中，并且随着P掺杂浓度或退火温度的升高，掺入的P杂质增加。此外，由于Si晶格的损坏，在高掺杂浓度或退火温度下将产生一种缺陷状态。更有趣的是，掺入的P掺杂剂可在超小型（〜2 nm）的Si NC中产生深能级，这将导致新的子带光发射，其波长与光通信的要求兼容。P掺杂Si NCs / SiO 2多层膜的研究表明，P掺杂在Si NCs的电子结构和光电特性中起着重要作用。