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Tuning the Cross-Linker Crystallinity of a Stretchable Polymer Semiconductor
Chemistry of Materials ( IF 7.2 ) Pub Date : 2018-11-30 00:00:00 , DOI: 10.1021/acs.chemmater.8b04314
Ging-Ji Nathan Wang , Yu Zheng , Song Zhang 1 , Jiheong Kang , Hung-Chin Wu , Andrea Gasperini , Hongyi Zhang , Xiaodan Gu 1 , Zhenan Bao
Affiliation  

The cross-linking of conjugated polymers has been demonstrated to be an effective strategy to improve its elastic properties to give deformable semiconductors for plastic electronics. While there have been extensive studies of the structural requirements of the polymer host for good film ductility, no work to date has focused on the relevance of the structural design or chemistry of these cross-linker additives. In this study, urethane groups and tertiary carbon atoms are inserted into the alkyl backbone of perfluorophenyl azide-based cross-linkers to investigate the importance of cross-linker crystallinity with respect to polymer morphology and hence mechanical and electrical properties. Linear cross-linkers with hydrogen bonding from urethane groups readily phase separate and recrystallize in the polymer network to form cross-linked domains that obstruct the strain distribution of the polymer film. Branch cross-linkers with tertiary carbon on the other hand form an evenly cross-linked network in the polymer blend stemming from excellent miscibility and show a 4-fold increase in fracture strain. Furthermore, a stable hole mobility of 0.2 cm2 V–1 s–1 is achieved up to ε = 100%, and a stable hole mobility of 0.1 cm2 V–1 s–1 after 2000 cycles of ε = 25% on fully stretchable organic field-effect transistors.

中文翻译:

调整可拉伸聚合物半导体的交联剂结晶度

已经证明,共轭聚合物的交联是改善其弹性性能以提供用于塑料电子产品的可变形半导体的有效策略。尽管已经对聚合物主体对良好的膜延展性的结构要求进行了广泛的研究,但是迄今为止,没有工作集中在这些交联剂添加剂的结构设计或化学性质上。在这项研究中,将氨基甲酸酯基团和叔碳原子插入基于全氟苯基叠氮化物的交联剂的烷基骨架中,以研究交联剂结晶度对聚合物形态以及机械和电气性能的重要性。具有与氨基甲酸酯基团氢键键合的线性交联剂容易在聚合物网络中相分离并重结晶,从而形成阻碍聚合物膜应变分布的交联区域。另一方面,具有叔碳的支链交联剂在聚合物共混物中形成均匀交联的网络,这源于极好的可混溶性,并显示出断裂应变增加了4倍。此外,0.2 cm的稳定空穴迁移率在完全可拉伸的有机场效应晶体管上,经过2000次ε= 25%的循环后,达到ε= 100%时达到2 V –1 s –1,稳定的空穴迁移率为0.1 cm 2 V –1 s –1
更新日期:2018-11-30
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