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Stabilities, Electronic and Optical Properties of SnSe2(1–x)S2x Alloys: A First-Principles Study
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-03-04 00:00:00 , DOI: 10.1021/acs.jpcc.6b00794
Yucheng Huang 1 , Xi Chen 1 , Danmei Zhou 1 , Hai Liu 1 , Chan Wang 1 , Jinyan Du 1 , Lixin Ning 1 , Sufan Wang 1
Affiliation  

First-principles investigations are performed on the stabilities and electronic and optical properties of SnSe2(1–x)S2x (x = 0.0625, 0.25, 0.5, 0.625, 0.8125, and 1.0) monolayer alloys by using density functional theory calculations. It is found that, above a critical temperature of 702 K, the mixing of SnSe2 and SnS2 is likely to form random alloys. The calculated negative substitution energy of S at the Se site of SnSe2 suggests an alternative strategy for the synthesis of the alloys, i.e., by the substitution of S for Se in SnSe2 monolayers. It is also shown that, due to the lattice mismatch and the pronounced charge transfer between SnSe2 and SnS2, the band-gap values of the alloys deviate strongly from the concentration-averaged values of the constituents. Moreover, the dielectric functions of the alloys are determined to be anisotropic, with optical properties along the xy plane being more susceptible to the S content than those along the z direction, and the alloying enhances the absorption strength in the visible spectral region. We hope that these insights will be useful for future applications of SnSe2(1–x)S2x alloys.

中文翻译:

SnSe 2(1– x S 2 x合金的稳定性,电学和光学性质:第一性原理研究

使用密度泛函理论计算,对SnSe 2(1- x S 2 xx = 0.0625、0.25、0.5、0.625、0.8125和1.0)单层合金的稳定性以及电子和光学性质进行了第一性原理研究。已经发现,在702 K的临界温度以上,SnSe 2和SnS 2的混合很可能形成无规合金。计算得出的在SnSe 2的Se位点处S的负取代能表明了合金合成的另一种策略,即通过在SnSe 2中用S取代Se单层。还显示出,由于晶格失配和SnSe 2和SnS 2之间的明显电荷转移,合金的带隙值大大偏离了成分的浓度平均值。此外,合金的介电函数被确定为各向异性的,沿着xy平面的光学特性比沿着z方向的光学特性更容易受到S含量的影响,合金化增强了可见光谱区域的吸收强度。我们希望这些见解将对SnSe 2(1- x S 2 x合金的未来应用有用。
更新日期:2016-03-04
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