Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM,Advanced Electronic Materials

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Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-11-19 , DOI: 10.1002/aelm.201800418
Zhiwei Chen ₁ , Weichuan Huang ₁ , Wenbo Zhao ₁ , Chuangming Hou ₁ , Chao Ma ₁ , Chuanchuan Liu ₁ , Haoyang Sun ₁ , Yuewei Yin ₁ , Xiaoguang Li _{1,

2}

Affiliation

Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next‐generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈10⁴) are obtained in yttrium iron garnet Y₃Fe₅O₁₂ (YIG)‐based resistive memory on n‐Si substrate. The sub‐nanosecond operation is also successfully performed up to 85 °C with an off/on resistance ratio of ≈10³. In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>10⁴ s). The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n‐Si RRAM cell shows its great potential for ultrafast multilevel memory applications.

中文翻译：

Au / YIG / n-Si RRAM中的超快速多级开关

具有超快和多级切换功能的电阻式随机存取存储器（RRAM）对于下一代非易失性存储器极为有前途。在这里，在n-Si衬底上的基于钇铁石榴石Y ₃ Fe ₅ O ₁₂（YIG）的电阻存储器中获得了具有高关断/接通电阻比（≈10 ⁴）的超快速单极电阻开关（≈540ps）。亚纳秒级操作还可以在高达85°C的温度下成功完成，其开/关电阻比约为≈10 ³。此外，通过在设置过程中使用不同的顺应性电流，可以实现五个离散的电阻水平，并且它们之间具有超快的切换速度，并且多水平状态显示出可靠的保持力（> 10 ⁴s）。Au / YIG / n-Si RRAM单元具有大，稳定，可再现和可靠的开关性能，显示了其在超快多层存储应用中的巨大潜力。

更新日期：2018-11-19

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