Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions,Nano Letters

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Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions
Nano Letters ( IF 9.6 ) Pub Date : 2018-11-16 00:00:00 , DOI: 10.1021/acs.nanolett.8b03775
Dingkun Ren ₁ , Xiao Meng ₂ , Zixuan Rong ₁ , Minh Cao ₁ , Alan C. Farrell ₁ , Siddharth Somasundaram ₁ , Khalifa M. Azizur-Rahman ₂ , Benjamin S. Williams _{1,

3} , Diana L. Huffaker _{1,

2,

3}

Affiliation

In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs–InP heterojunctions. We measure a rectification ratio greater than 300 at room temperature, which indicates a desirable diode performance. The dark current density, normalized to the area of nanowire heterojunctions, is 130 mA/cm² at a temperature of 300 K and a reverse bias of 0.5 V, making it comparable to the state-of-the-art bulk InAs p-i-n photodiodes. An analysis of the Arrhenius plot of the dark current at reverse bias yields an activation energy of 175 meV from 190 to 300 K, suggesting that the Shockley–Read–Hall (SRH) nonradiative current is the primary contributor to the dark current. By using three-dimensional electrical simulations, we determine that the SRH nonradiative current originates from the acceptor-like surface traps at the nanowire-passivation heterointerfaces. The spectral response at room temperature is also measured, with a clear photodetection signature observed at wavelengths up to 2.5 μm. This study provides an understanding of dark current for small band gap selective-area nanowires and paves the way to integrate these improved nanostructured photoabsorbers on large band gap substrates for high-performance photodetectors at SWIR.

中文翻译：

在具有p – n异质结的InP上使用InAs纳米线光吸收剂在短波长红外下使用非制冷光电探测器

在这项工作中，我们展示了一个短波红外（SWIR）的InAs纳米线光电探测器，该探测器由InP衬底上垂直定向的选择性区域InAs纳米线光吸收剂阵列组成，形成InAs–InP异质结。我们在室温下测得的整流比大于300，这表示理想的二极管性能。归一化为纳米线异质结面积的暗电流密度在300 K的温度和0.5 V的反向偏置下为130 mA / cm ²，使其可与最新的体InAs p - i相媲美。- ñ光电二极管。对反向偏置下暗电流的Arrhenius曲线进行分析，得出从190到300 K的175meV活化能，这表明Shockley-Read-Hall（SRH）非辐射电流是暗电流的主要贡献者。通过使用三维电模拟，我们确定SRH非辐射电流起源于纳米线钝化异质界面处的受体样表面陷阱。还测量了室温下的光谱响应，在高达2.5μm的波长下观察到了清晰的光检测特征。这项研究为小带隙选择区域纳米线提供了暗电流的理解，并为将这些改进的纳米结构光吸收剂集成到大带隙衬底上的方法，以用于SWIR的高性能光电探测器。

更新日期：2018-11-16

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