Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration,Crystal Growth & Design

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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2018-11-12 00:00:00 , DOI: 10.1021/acs.cgd.8b01424
Fernando Lloret _{1,

2,

3} , Daniel Araújo ₃ , David Eon ₄ , Etienne Bustarret ₄

Affiliation

The overgrowth of {100}-oriented patterned diamond substrates by microwave plasma enhanced chemical vapor deposition was studied by transmission electron microscopy through a stratigraphic approach. A sector-like growth behavior is evidenced, resulting from a competition between slowly growing facets at protruding (top) corners and edges against quickly growing facets at recessing (bottom) corners. Depending on the pattern orientation and height, under some particular experimental conditions, it is possible to predict the sequence of growth sectors, and thus to choose the crystallographic orientation of the overgrown surface, by stopping the growth at the right stage. A simple two-dimensional model is provided, allowing the fabrication of structures adapted to the requirements of specific electronic devices.

中文翻译：

MESA结构上的三维金刚石MPCVD增长：生长部门配置的几何模型

通过地层方法通过透射电子显微镜研究了{100}取向的图案化金刚石基底通过微波等离子体增强化学气相沉积的过度生长。证明是扇形的增长行为，这是由于在凸出（顶部）拐角处的缓慢增长的小平面与边缘（在凹入（底部）角处的快速增长的小平面）之间的竞争所致。根据图案的方向和高度，在某些特定的实验条件下，可以通过在适当的阶段停止生长来预测生长扇区的顺序，从而选择长满的表面的晶体学取向。提供了一个简单的二维模型，允许制造适合特定电子设备要求的结构。

更新日期：2018-11-12

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