Semipolar (112) GaN templates are improved by interface modification and employed as growth templates for green-amber-emitting high indium content InGaN/GaN quantum wells (QWs). The interface modification is realized by high-temperature annealing of an inserted low-temperature GaN layer, which enhances adatom diffusion and site-selectively blocks defects for interface-modified GaN templates. The luminescence properties of the InGaN/GaN QWs grown on the semipolar GaN templates are significantly enhanced by the interface modification. Green-amber emission with double peaks at 520 and 600 nm is observed for the InGaN/GaN QWs grown on the interface-modified semipolar GaN templates and is attributed to a) improvement in overlapping of the electron and hole wave functions due to weak polarization fields for growth along (112), b) enhancement in interband transitions involving the excited quantized carrier states, and c) reduction in electron loss at high injection currents due to reduction of threading defect density in the interface-modified semipolar GaN templates.

中文翻译：

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通过半极性（11 2）GaN模板的 界面改性改善了高铟含量InGaN量子阱的绿琥珀色发射

半极性（11 2）GaN模板通过界面修改得到改进，并用作绿色发射绿色高铟含量InGaN / GaN量子阱（QW）的生长模板。界面改性是通过对插入的低温GaN层进行高温退火来实现的，这可以增强吸附原子的扩散并选择性地阻挡界面改性GaN模板的缺陷。通过界面改性，在半极性GaN模板上生长的InGaN / GaN QW的发光特性得到了显着增强。对于在界面改性的半极性GaN模板上生长的InGaN / GaN QW，观察到在520和600 nm处有双峰的绿琥珀色发射，这归因于a）由于弱极化场而改善了电子和空穴波功能的重叠沿着（112），b）涉及激发的量子化载流子态的带间跃迁的增强，以及c）由于界面修饰的半极性GaN模板中穿线缺陷密度的减小，在高注入电流下电子损耗的减小。