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Multifunctional P-Doped TiO2 Films: A New Approach to Self-Cleaning, Transparent Conducting Oxide Materials
Chemistry of Materials ( IF 7.2 ) Pub Date : 2015-05-01 00:00:00 , DOI: 10.1021/cm504734a
Carlos Sotelo-Vazquez 1 , Nuruzzaman Noor 1 , Andreas Kafizas 1, 2 , Raul Quesada-Cabrera 1 , David O. Scanlon 3, 4 , Alaric Taylor 5 , James R. Durrant 2 , Ivan P. Parkin 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2015-05-01 00:00:00 , DOI: 10.1021/cm504734a
Carlos Sotelo-Vazquez 1 , Nuruzzaman Noor 1 , Andreas Kafizas 1, 2 , Raul Quesada-Cabrera 1 , David O. Scanlon 3, 4 , Alaric Taylor 5 , James R. Durrant 2 , Ivan P. Parkin 1
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Multifunctional P-doped TiO2 thin films were synthesized by atmospheric pressure chemical vapor deposition (APCVD). This is the first example of P-doped TiO2 films with both P5+ and P3– states, with the relative proportion being determined by synthesis conditions. This technique to control the oxidation state of the impurities presents a new approach to achieve films with both self-cleaning and TCO properties. The origin of electrical conductivity in these materials was correlated to the incorporation of P5+ species, as suggested by Hall Effect probe measurements. The photocatalytic performance of the films was investigated using the model organic pollutant, stearic acid, with films containing predominately P3– states found to be vastly inferior photocatalysts compared to undoped TiO2 films. Transient absorption spectroscopy studies also showed that charge carrier concentrations increased by several orders of magnitude in films containing P5+ species only, whereas photogenerated carrier lifetimes—and thus photocatalytic activity—were severely reduced upon incorporation of P3– species. The results presented here provide important insights on the influence of dopant nature and location within a semiconductor structure. These new P-doped TiO2 films are a breakthrough in the development of multifunctional advanced materials with tuned properties for a wide range of applications.
中文翻译：
多功能P掺杂TiO 2薄膜：自清洁，透明导电氧化物材料的新方法
通过大气压化学气相沉积（APCVD）合成了多功能的P掺杂TiO 2薄膜。这是同时具有P 5+和P 3–态的P掺杂TiO 2薄膜的第一个例子，其相对比例由合成条件确定。控制杂质氧化态的这项技术为获得具有自清洁和TCO特性的薄膜提供了一种新方法。这些材料中电导率的起源与P 5+的掺入有关如霍尔效应探针测量所建议的那样。使用模型有机污染物硬脂酸对薄膜的光催化性能进行了研究，与未掺杂的TiO 2薄膜相比，主要包含P 3–态的薄膜被认为是劣等的光催化剂。瞬态吸收光谱研究还表明，仅包含P 5+物质的薄膜中的电荷载流子浓度增加了几个数量级，而掺入P 3–物种。本文介绍的结果提供了有关掺杂剂性质和半导体结构内位置影响的重要见解。这些新型的P掺杂TiO 2薄膜是具有多种用途的可调节性能的多功能先进材料开发的突破。
更新日期：2015-05-01
中文翻译：
多功能P掺杂TiO 2薄膜：自清洁，透明导电氧化物材料的新方法
通过大气压化学气相沉积（APCVD）合成了多功能的P掺杂TiO 2薄膜。这是同时具有P 5+和P 3–态的P掺杂TiO 2薄膜的第一个例子，其相对比例由合成条件确定。控制杂质氧化态的这项技术为获得具有自清洁和TCO特性的薄膜提供了一种新方法。这些材料中电导率的起源与P 5+的掺入有关如霍尔效应探针测量所建议的那样。使用模型有机污染物硬脂酸对薄膜的光催化性能进行了研究，与未掺杂的TiO 2薄膜相比，主要包含P 3–态的薄膜被认为是劣等的光催化剂。瞬态吸收光谱研究还表明，仅包含P 5+物质的薄膜中的电荷载流子浓度增加了几个数量级，而掺入P 3–物种。本文介绍的结果提供了有关掺杂剂性质和半导体结构内位置影响的重要见解。这些新型的P掺杂TiO 2薄膜是具有多种用途的可调节性能的多功能先进材料开发的突破。
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