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Effects of Environmental Water Absorption by Solution-Deposited Al2O3 Gate Dielectrics on Thin Film Transistor Performance and Mobility.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-11-09 00:00:00 , DOI: 10.1021/acsami.8b15592 Trey B Daunis 1 , James M H Tran 1 , Julia W P Hsu 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2018-11-09 00:00:00 , DOI: 10.1021/acsami.8b15592 Trey B Daunis 1 , James M H Tran 1 , Julia W P Hsu 1
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In recent years, many solution-processed oxide transistors have been reported with mobility rivaling or exceeding their vacuum-deposited counterparts. Here, we show that water absorption from the environment by solution-processed dielectric materialsexplains this enhanced mobility. By monitoring the water content of Al2O3, ZrO2, and bilayer dielectric materials, we demonstrate how water absorption by the dielectric affects electrical characteristics in solution-processed metal oxide transistors. These effects, including capacitance-frequency dispersion, counterclockwise hysteresis in transfer curves, and high channel mobility, are elucidated by electron transfer between the gate/channel and trap states within the band gap of the dielectric created by the water.
中文翻译：
溶液沉积的Al2O3栅极电介质吸收环境水对薄膜晶体管性能和迁移率的影响。
近年来，已经报道了许多溶液处理的氧化物晶体管，其迁移率可与之相比，甚至超过其真空沉积的晶体管。在这里，我们表明溶液处理介电材料从环境中吸收的水解释了这种增强的迁移率。通过监视Al2O3，ZrO2和双层电介质材料的水含量，我们证明了电介质对水的吸收如何影响溶液处理的金属氧化物晶体管中的电特性。这些效应，包括电容-频率色散，传输曲线中的逆时针滞后以及高沟道迁移率，可通过水在电介质带隙内的栅/沟道状态和陷阱状态之间的电子转移来阐明。
更新日期：2018-11-09
中文翻译：
溶液沉积的Al2O3栅极电介质吸收环境水对薄膜晶体管性能和迁移率的影响。
近年来，已经报道了许多溶液处理的氧化物晶体管，其迁移率可与之相比，甚至超过其真空沉积的晶体管。在这里，我们表明溶液处理介电材料从环境中吸收的水解释了这种增强的迁移率。通过监视Al2O3，ZrO2和双层电介质材料的水含量，我们证明了电介质对水的吸收如何影响溶液处理的金属氧化物晶体管中的电特性。这些效应，包括电容-频率色散，传输曲线中的逆时针滞后以及高沟道迁移率，可通过水在电介质带隙内的栅/沟道状态和陷阱状态之间的电子转移来阐明。
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