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Surface-Limited Superconducting Phase Transition on 1T-TaS2
ACS Nano ( IF 15.8 ) Pub Date : 2018-11-07 00:00:00 , DOI: 10.1021/acsnano.8b07379 Ziying Wang 1 , Yi-Yang Sun 2 , Ibrahim Abdelwahab 1 , Liang Cao 3 , Wei Yu 1 , Huanxin Ju 4 , Junfa Zhu 4 , Wei Fu 1 , Leiqiang Chu 1 , Hai Xu 1, 3 , Kian Ping Loh 1
ACS Nano ( IF 15.8 ) Pub Date : 2018-11-07 00:00:00 , DOI: 10.1021/acsnano.8b07379 Ziying Wang 1 , Yi-Yang Sun 2 , Ibrahim Abdelwahab 1 , Liang Cao 3 , Wei Yu 1 , Huanxin Ju 4 , Junfa Zhu 4 , Wei Fu 1 , Leiqiang Chu 1 , Hai Xu 1, 3 , Kian Ping Loh 1
Affiliation
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Controlling superconducting phase transition on a two-dimensional (2D) material is of great fundamental and technological interest from the viewpoint of making 2D resistance-free electronic circuits. Here, we demonstrate that a 1T-to-2H phase transition can be induced on the topmost monolayer of bulk (<100 nm thick) 1T-TaS2 by thermal annealing. The monolayer 2H-TaS2 on bulk 1T-TaS2 exhibits a superconducting transition temperature (Tc) of 2.1 K, which is significantly enhanced compared to that of bulk 2H-TaS2. Scanning tunneling microscopy measurements reveal a 3 × 3 charge density wave (CDW) in the phase-switched monolayer at 4.5 K. The enhanced Tc is explained by the suppressed 3 × 3 CDW and a charge-transfer doping from the 1T substrate. We further show that the monolayer 2H-TaS2 could be switched back to 1T phase by applying a voltage pulse. The observed surface-limited superconducting phase transition offers a convenient way to prepare robust 2D superconductivity on bulk 1T-TaS2 crystal, thereby bypassing the need to exfoliate monolayer samples.
中文翻译：
1 T -TaS 2上的表面限制超导相变
从制造无二维电阻的电子电路的观点来看，控制二维（2D）材料上的超导相变具有重要的基础和技术意义。在这里，我们证明了一个1 Ť -to-2 ħ相变可在散装（<100nm厚）1的最上面的单层来诱导Ť μ-TAS 2通过热退火。单层2 ħ μ-TAS 2上堆积1 Ť μ-TAS 2所表现出超导转变温度（Ť Ç 2.1 K，这是相比于散装2的显著增强的）ħ μ-TAS 2。扫描隧道显微镜测量显示，在4.5 K时，相转换单层中有3×3电荷密度波（CDW）。增强的T c可以通过抑制的3×3 CDW和来自1 T衬底的电荷转移掺杂来解释。我们进一步表明，单层2 H -TaS 2可以通过施加电压脉冲切换回1 T相。观察到的表面受限的超导相变提供了一种方便的方法，可以在块状1 T -TaS 2晶体上制备稳固的2D超导，从而避免了剥落单层样品的需要。
更新日期：2018-11-07
中文翻译：
1 T -TaS 2上的表面限制超导相变
从制造无二维电阻的电子电路的观点来看，控制二维（2D）材料上的超导相变具有重要的基础和技术意义。在这里，我们证明了一个1 Ť -to-2 ħ相变可在散装（<100nm厚）1的最上面的单层来诱导Ť μ-TAS 2通过热退火。单层2 ħ μ-TAS 2上堆积1 Ť μ-TAS 2所表现出超导转变温度（Ť Ç 2.1 K，这是相比于散装2的显著增强的）ħ μ-TAS 2。扫描隧道显微镜测量显示，在4.5 K时，相转换单层中有3×3电荷密度波（CDW）。增强的T c可以通过抑制的3×3 CDW和来自1 T衬底的电荷转移掺杂来解释。我们进一步表明，单层2 H -TaS 2可以通过施加电压脉冲切换回1 T相。观察到的表面受限的超导相变提供了一种方便的方法，可以在块状1 T -TaS 2晶体上制备稳固的2D超导，从而避免了剥落单层样品的需要。
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