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NIR to Visible Light Upconversion Devices Comprising an NIR Charge Generation Layer and a Perovskite Emitter
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2018-10-24 , DOI: 10.1002/adom.201801084
Ning Li 1 , Ying Suet Lau 1 , Zuo Xiao 2 , Liming Ding 2 , Furong Zhu 1
Affiliation  

Near‐infrared (NIR) to visible light upconversion is of significant importance in many applications, including thermal imaging, bioimaging, night vision, and wellness monitoring. Here, the effort to develop a high‐performing NIR to saturated green light upconversion device comprising a front solution‐processable organic bulk heterojunction NIR charge generation layer (CGL) and an upper CsPbBr3 perovskite light‐emitting diode (LED) unit is reported. The NIR CGL, based on a blend of the NIR‐sensitive donor polymer and a nonfullerene acceptor, enables an efficient hole injection in the CsPbBr3 LED in the presence of the NIR light and also serves as an optical outcoupling layer to enhance the visible light emission by the CsPbBr3 LED. The CsPbBr3‐based perovskite LED has a narrow emission spectrum with a peak wavelength of 520 nm, corresponding to the wavelengths near the peak response of the human eye, and has the advantage in imaging applications. Based on the upconversion process, a pixel‐less NIR to visible light imaging device is demonstrated, which can be operated at a low voltage of 3 V. The results are very encouraging, revealing a high‐performing solution‐processable upconversion device for application in NIR light imaging.

中文翻译:

NIR到可见光上转换器件,包括一个NIR电荷产生层和一个钙钛矿发射极

近红外(NIR)到可见光的上转换在许多应用中非常重要,包括热成像,生物成像,夜视和健康监测。在此,报告了开发一种高性能NIR到饱和绿光上转换器件的努力,该器件包括可溶液前处理的有机体异质结NIR电荷产生层(CGL)和上部CsPbBr 3钙钛矿发光二极管(LED)单元。NIR CGL基于对NIR敏感的供体聚合物和非富勒烯受体的共混物,可以在存在NIR光的情况下在CsPbBr 3 LED中进行有效的空穴注入,并且还可以用作光学外耦合层以增强可见光CsPbBr 3 LED发出的光。CsPbBr 3基于钙钛矿的LED具有窄的发射光谱,其峰值波长为520 nm,对应于接近人眼峰值响应的波长,在成像应用中具有优势。在上转换过程的基础上,展示了一种无像素NIR可见光成像设备,该设备可以在3 V的低压下工作。结果令人鼓舞,揭示了一种高性能解决方案可处理的上转换设备,可用于近红外光成像。
更新日期:2018-10-24
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