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2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-10-21 , DOI: 10.1002/aelm.201800527 Hyun Jae Lee 1 , Taehwan Moon 1 , Cheol Hyun An 1 , Cheol Seong Hwang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-10-21 , DOI: 10.1002/aelm.201800527 Hyun Jae Lee 1 , Taehwan Moon 1 , Cheol Hyun An 1 , Cheol Seong Hwang 1
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The presence of 2D electron gas (2DEG) at the interface between an amorphous Al2O3 (a‐AO) thin film and an anatase TiO2 (TO) thin film is demonstrated. The a‐AO and TO thin films are prepared via atomic layer deposition on a SrTiO3 (STO) single crystal substrate. The reduction of the TO surface during the a‐AO deposition produces oxygen vacancies, which are effective electron donors. The systematic analysis of the physical properties of the TO layer reveals that the crystallinity of the TO layer affects the conductivity, carrier concentration and the mobility of the 2DEG, and also the critical a‐AO thickness, which is the minimum thickness for exhibiting the apparent conductivity. The 2DEG between the a‐AO and the sufficiently thick TO layer exhibits an almost two‐orders‐of‐magnitude‐higher carrier concentration (≈1014 cm‐2) than the previously reported 2DEG at a‐AO/STO, while the mobility (≈10° cm2 V‐1 s‐1) is relatively low. Also, angle‐resolved X‐ray photoelectron spectroscopy elucidates the spatial distribution and atomic ratio of the reduced Ti ions. Due to the increasing fraction of the anatase phase in the TO layer, the oxygen vacancies are prone to ionize, and the carriers are better confined to the interface, making them more 2DEG‐like.
中文翻译：
SrTiO3单晶衬底上原子沉积Al2O3 / TiO2界面的二维电子气
证明了在非晶Al 2 O 3（a- AO）薄膜和锐钛矿型TiO 2（TO）薄膜之间的界面处存在2D电子气（2DEG）。在一个-AO和TO薄膜通过原子层沉积而制备的的SrTiO上3（STO）单晶基板。在a- AO沉积期间TO表面的还原会产生氧空位，这是有效的电子给体。对TO层物理特性的系统分析表明，TO层的结晶度会影响2DEG的电导率，载流子浓度和迁移率，并且还会影响关键的a-AO厚度，它是表现出表观电导率的最小厚度。的之间的2DEG一个和-AO的足够厚的TO层表现出几乎2订单的数量级，较高载流子浓度（≈10 14厘米-2）比以前报道的2DEG在一个-AO / STO，而迁移率（≈10°厘米2 V -1小号-1）是相对低的。此外，角度分辨X射线光电子能谱还阐明了还原Ti离子的空间分布和原子比。由于TO层中锐钛矿相的比例增加，氧空位易于离子化，并且载流子更好地局限在界面上，使其更像2DEG。
更新日期：2018-10-21
中文翻译：
SrTiO3单晶衬底上原子沉积Al2O3 / TiO2界面的二维电子气
证明了在非晶Al 2 O 3（a- AO）薄膜和锐钛矿型TiO 2（TO）薄膜之间的界面处存在2D电子气（2DEG）。在一个-AO和TO薄膜通过原子层沉积而制备的的SrTiO上3（STO）单晶基板。在a- AO沉积期间TO表面的还原会产生氧空位，这是有效的电子给体。对TO层物理特性的系统分析表明，TO层的结晶度会影响2DEG的电导率，载流子浓度和迁移率，并且还会影响关键的a-AO厚度，它是表现出表观电导率的最小厚度。的之间的2DEG一个和-AO的足够厚的TO层表现出几乎2订单的数量级，较高载流子浓度（≈10 14厘米-2）比以前报道的2DEG在一个-AO / STO，而迁移率（≈10°厘米2 V -1小号-1）是相对低的。此外，角度分辨X射线光电子能谱还阐明了还原Ti离子的空间分布和原子比。由于TO层中锐钛矿相的比例增加，氧空位易于离子化，并且载流子更好地局限在界面上，使其更像2DEG。
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