Abstract Barium Titanate and Ni-based multilayer ceramic capacitors have wide commercial applicability, and interfaces are critical to the overall device behavior as they can help control unwanted leakage currents. Here we make use of photoemission methods to investigate the electrostatic barriers formed at BaTiO3/Ni(O) interfaces to understand the implications for electron injection. We find the interface Fermi level in BaTiO3 to evolve smoothly during Ni deposition with a Schottky barrier height for electrons of 0.68 eV, whereas with NiO the Fermi level evolves rapidly with an electron injection barrier of 1.49 eV. In-situ poling shows the Schottky barrier at the BaTiO3/Ni interface is not significantly altered by ferroelectric polarization, consistent with the good screening of the Ni electrode. This study presents a direct quantitative measurement of the interface barrier heights and highlights the significance of the oxidation state of the electrode.

中文翻译：

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BaTiO3 与 Ni 和 NiO 界面的势垒形成

摘要 钛酸钡和镍基多层陶瓷电容器具有广泛的商业适用性，界面对于整个器件行为至关重要，因为它们可以帮助控制不需要的泄漏电流。在这里，我们利用光电发射方法来研究在 BaTiO3/Ni(O) 界面上形成的静电势垒，以了解对电子注入的影响。我们发现 BaTiO3 中的界面费米能级在 Ni 沉积过程中平稳演化，电子的肖特基势垒高度为 0.68 eV，而对于 NiO，费米能级快速演化，电子注入势垒为 1.49 eV。原位极化显示 BaTiO3/Ni 界面处的肖特基势垒没有被铁电极化显着改变，这与 Ni 电极的良好屏蔽一致。