The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe₂ have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe₂ photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe₂ films by simple selenization method for the design of a PtSe₂/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 10¹³ Jones at −5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe₂ with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe₂/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

由于PtSe ₂的高载流子迁移率，可调节的绷带和超高的稳定性，新发现的诸如PtSe _2的第10组过渡金属二硫化碳（TMD）在高性能微电子和光电器件中具有广阔的应用前景。然而，仍未发现与硅集成的宽带PtSe ₂光电探测器的光电性能。在这里，我们报道了通过简单的硒化方法成功制备了大规模，均匀且垂直生长的PtSe ₂膜，用于设计PtSe ₂ / Si纳米线阵列异质结构，该结构表现出非常好的12.65 A / W的光响应性，比灵敏度为2.5×10 ¹³ 琼斯电压为-5 V，在10 kHz时快速上升/下降时间为10.1 / 19.5μs，且无衰减，同时能够响应高达120 kHz的高频。我们的工作证明了PtSe ₂与现有硅技术的兼容性以及从深紫外到光通信波长的超宽带检测，可以极大地覆盖硅检测器的局限性。对该器件的进一步研究表明，在0 V时有明显的光伏行为，使其能够作为自供电的光电探测器工作。总体而言，这种具有代表性的基于PtSe ₂ / Si纳米线阵列的光电探测器为下一代光电和电子设备的应用提供了巨大的潜力。