Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride,Nano Letters

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Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride
Nano Letters ( IF 9.6 ) Pub Date : 2018-09-27 00:00:00 , DOI: 10.1021/acs.nanolett.8b02804
Qixing Wang ₁ , Qi Zhang ₁ , Xiaoxu Zhao _{2,

3,

4} , Xin Luo _{5,

6} , Calvin Pei Yu Wong _{1,

4,

7} , Junyong Wang ₁ , Dongyang Wan ₈ , T. Venkatesan _{1,

4,

8,

9,

10} , Stephen J. Pennycook _{1,

4,

8,

9} , Kian Ping Loh _{2,

3} , Goki Eda _{1,

2,

3} , Andrew T. S. Wee _{1,

3}

Affiliation

Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore 117456, Singapore
State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, Guangdong, People’s Republic of China
Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People’s Republic of China
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
NUSNNI-NanoCore, National University of Singapore, 117411, Singapore
Department of Materials Science & Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
Department of Electrical and Computer Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore

Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.

中文翻译：

六方氮化硼中缺陷的光致发光上转换。

据报道，由于存在缺陷，六方氮化硼（h-BN）显示出从紫外到近红外范围的单光子发射。单光子发射在量子信息处理和光电子学中具有潜在的应用。这些发现激发了人们对h-BN缺陷的研究兴趣，例如揭示了缺陷的性质。在这里，我们报道了h-BN中另一个有趣的缺陷性质，即光致发光（PL）上转换（反斯托克斯过程）。PL上变频获得的能量增益约为162 meV。PL异常上转换归因于基于激发功率，激发波长和温度相关性研究的单光子激发过程中的光子吸收。从扫描透射电子显微镜（STEM）研究的结果和理论计算中讨论了缺陷的可能构成。这些发现表明，h-BN中的缺陷表现出强的缺陷-声子耦合。STEM和理论计算的结果有助于理解h-BN缺陷的构成。

更新日期：2018-09-27

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