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Band-Like Charge Transport in Cs2AgBiBr6 and Mixed Antimony–Bismuth Cs2AgBi1–xSbxBr6 Halide Double Perovskites
ACS Omega ( IF 3.7 ) Pub Date : 2018-09-24 00:00:00 , DOI: 10.1021/acsomega.8b01705 Eline M Hutter 1, 2 , María C Gélvez-Rueda 2 , Davide Bartesaghi 2 , Ferdinand C Grozema 2 , Tom J Savenije 2
ACS Omega ( IF 3.7 ) Pub Date : 2018-09-24 00:00:00 , DOI: 10.1021/acsomega.8b01705 Eline M Hutter 1, 2 , María C Gélvez-Rueda 2 , Davide Bartesaghi 2 , Ferdinand C Grozema 2 , Tom J Savenije 2
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Recently, halide double perovskites (HDPs), such as Cs2AgBiBr6, have been reported as promising nontoxic alternatives to lead halide perovskites. However, it remains unclear whether the charge-transport properties of these materials are as favorable as for lead-based perovskites. In this work, we study the mobilities of charges in Cs2AgBiBr6 and in mixed antimony–bismuth Cs2AgBi1–xSbxBr6, in which the band gap is tunable from 2.0 to 1.6 eV. Using temperature-dependent time-resolved microwave conductivity techniques, we find that the mobility is proportional to T–p (with p ≈ 1.5). Importantly, this indicates that phonon scattering is the dominant scattering mechanism determining the charge carrier mobility in these HDPs similar to the state-of-the-art lead-based perovskites. Finally, we show that wet chemical processing of Cs2AgBi1–xSbxBr6 powders is a successful route to prepare thin films of these materials, which paves the way toward photovoltaic devices based on nontoxic HDPs with tunable band gaps.
中文翻译：
Cs2AgBiBr6 和混合锑-铋 Cs2AgBi1–xSbxBr6 卤化物双钙钛矿中的带状电荷传输
最近，卤化物双钙钛矿（HDP），例如Cs 2 AgBiBr 6 ，被报道为卤化铅钙钛矿的有前途的无毒替代品。然而，目前尚不清楚这些材料的电荷传输特性是否与铅基钙钛矿一样有利。在这项工作中，我们研究了 Cs 2 AgBiBr 6和混合锑铋 Cs 2 AgBi 1– x Sb x Br 6中的电荷迁移率，其中带隙可在 2.0 至 1.6 eV 之间调节。使用温度相关的时间分辨微波电导率技术，我们发现迁移率与T – p成正比（ p ≈ 1.5）。重要的是，这表明声子散射是决定这些 HDP 中载流子迁移率的主要散射机制，类似于最先进的铅基钙钛矿。最后，我们表明，Cs 2 AgBi 1– x Sb x Br 6粉末的湿化学处理是制备这些材料薄膜的成功途径，这为基于带隙可调的无毒 HDP 的光伏器件铺平了道路。
更新日期：2018-09-24
中文翻译：
Cs2AgBiBr6 和混合锑-铋 Cs2AgBi1–xSbxBr6 卤化物双钙钛矿中的带状电荷传输
最近，卤化物双钙钛矿（HDP），例如Cs 2 AgBiBr 6 ，被报道为卤化铅钙钛矿的有前途的无毒替代品。然而，目前尚不清楚这些材料的电荷传输特性是否与铅基钙钛矿一样有利。在这项工作中，我们研究了 Cs 2 AgBiBr 6和混合锑铋 Cs 2 AgBi 1– x Sb x Br 6中的电荷迁移率，其中带隙可在 2.0 至 1.6 eV 之间调节。使用温度相关的时间分辨微波电导率技术，我们发现迁移率与T – p成正比（ p ≈ 1.5）。重要的是，这表明声子散射是决定这些 HDP 中载流子迁移率的主要散射机制，类似于最先进的铅基钙钛矿。最后，我们表明，Cs 2 AgBi 1– x Sb x Br 6粉末的湿化学处理是制备这些材料薄膜的成功途径，这为基于带隙可调的无毒 HDP 的光伏器件铺平了道路。
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