n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces†,Physical Chemistry Chemical Physics

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n- and p-type ohmic contacts at monolayer gallium nitride–metal interfaces†
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2018-08-28 00:00:00 , DOI: 10.1039/c8cp04759f
Ying Guo _{1,

2,

3,

4,

5} , Feng Pan _{1,

2,

3,

4,

5} , Yajie Ren _{1,

2,

3,

4,

5} , Binbin Yao _{1,

2,

3,

4,

5} , Chuanghua Yang _{1,

2,

3,

4,

5} , Meng Ye _{5,

6,

7} , Yangyang Wang _{5,

8,

9,

10,

11} , Jingzhen Li _{5,

12,

13,

14} , Xiuying Zhang _{5,

12,

13,

14} , Jiahuan Yan _{5,

12,

13,

14} , Jinbo Yang _{5,

12,

13,

14,

15} , Jing Lu _{5,

12,

13,

14,

15}

Affiliation

School of Physics and Telecommunication Engineering
Shaanxi Key Laboratory of Catalysis
Shaanxi University of Technology
Hanzhong 723001
P. R. China
State Key Laboratory for Superlattices and Microstructures
Institute of Semiconductors, Chinese Academy of Sciences
Nanophotonics and Optoelectronics Research Center
Qian Xuesen Laboratory of Space Technology
China Academy of Space Technology
Beijing 100094
State Key Laboratory of Mesoscopic Physics and Department of Physics
Peking University
Beijing 100871
Collaborative Innovation Center of Quantum Matter

Recently, two-dimensional (2D) gallium nitride (GaN) was experimentally fabricated, and has promising applications in next-generation electronic and optoelectronic devices. A direct contact with metals to inject the carrier is often required for potential 2D GaN devices. Herein, the first systematic study on the interface properties of monolayer (ML) planar and buckled GaN with different metal electrodes (Al, Ti, Ag, Au, Sc, and Pt) in a field-effect transistor framework is presented using first-principles energy band calculations and quantum transport simulations. Because of moderate Fermi level pinning (electron pinning factor S^e_L = 0.63), ML planar GaN and the Ag electrode form an n-type lateral Schottky contact, while ML planar GaN and Ti, Al, and Au electrodes form a p-type lateral Schottky contact. The ML buckled GaN, Ag, Al, Ti, and Sc electrodes form a p-type lateral Schottky contact as a result of Fermi level pinning with a hole pinning factor of S^h_L = 0.75. Notably, a highly desirable n-type/p-type lateral ohmic contact is formed at the lateral interface of the ML planar GaN and Sc/Pt electrodes, and a p-type lateral ohmic contact is formed at the lateral interface of the ML buckled GaN and Pt/Au electrodes. Therefore, a low resistance contact can be realized in ML planar and buckled GaN devices.

中文翻译：

单层氮化镓-金属界面处的n型和p型欧姆接触†

最近，二维（2D）氮化镓（GaN）进行了实验制造，在下一代电子和光电设备中具有广阔的应用前景。潜在的2D GaN器件通常需要与金属直接接触以注入载流子。在本文中，使用第一性原理首次系统研究了具有不同金属电极（Al，Ti，Ag，Au，Sc和Pt）的单层（ML）平面GaN和屈曲GaN与不同金属电极的界面特性能带计算和量子输运模拟。由于中等费米能级钉扎（电子钉扎因子S ^e_L= 0.63），ML平面GaN和Ag电极形成n型横向肖特基接触，而ML平面GaN和Ti，Al和Au电极形成p型横向肖特基接触。ML弯曲的GaN，Ag，Al，Ti和Sc电极通过费米能级钉扎和空穴钉扎因子S ^h_L = 0.75形成p型横向肖特基接触。值得注意的是，在ML平面GaN和Sc / Pt电极的侧向界面处形成了非常理想的n型/ p型横向欧姆接触，在ML弯曲的ML侧向界面处形成了p型横向欧姆接触GaN和Pt / Au电极。因此，可以在ML平面和弯曲GaN器件中实现低电阻接触。

更新日期：2018-08-28

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