Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering,ACS Nano

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Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering
ACS Nano ( IF 15.8 ) Pub Date : 2018-08-24 00:00:00 , DOI: 10.1021/acsnano.8b04265
Chanwoo Lee _{1,

2} , Byeong Geun Jeong ₁ , Seok Joon Yun _{1,

2} , Young Hee Lee _{1,

2,

3} , Seung Mi Lee ₄ , Mun Seok Jeong _{1,

2}

Affiliation

Monolayer tungsten disulfide (WS₂) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS₂, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS₂ by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D′ modes. We found that the sulfur vacancies introduce not only the red-shifted A_1g mode but also the D and D′ modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS₂ and will be helpful to improve the performance of WS₂ optoelectronic devices.

中文翻译：

通过尖端增强共振拉曼散射揭示单层WS ₂的与缺陷相关的拉曼模式

单层二硫化钨（WS ₂）由于其光致发光的量子产率而已成为光电器件的活性材料。尽管对单层WS _2的物理特性进行了大量研究，但很少研究与缺陷相关的拉曼散射。在这里，我们通过使用尖端增强共振拉曼光谱报告了单层WS ₂中形貌与拉曼散射的相关性，并揭示了与缺陷相关的拉曼模式，称为D和D'模式。我们发现，通过密度泛函理论计算，硫空位不仅引入了红移的A _1g模式，而且还引入了D和D'模式。观察到的与缺陷相关的拉曼模式可用于评估单层WS的质量₂，将有助于提高WS ₂光电设备的性能。

更新日期：2018-08-24

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