Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots,Nano Letters

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Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots
Nano Letters ( IF 9.6 ) Pub Date : 2018-08-24 00:00:00 , DOI: 10.1021/acs.nanolett.8b02143
Guanghui Cheng , Baikui Li ₁ , Chunyu Zhao , Xin Yan , Hong Wang ₂ , Kei May Lau , Jiannong Wang

Affiliation

van der Waals heterostructures that are usually formed using atomically thin transition-metal dichalcogenides (TMDCs) with a direct band gap in the near-infrared to the visible range are promising candidates for low-dimension optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and the substrate or between adjacent 2D layers plays an important role in modifying the properties of the individual 2D material or device performances through Coulomb interaction or forming interlayer excitons. Here, we report the realization of quasi-zero-dimensional (0D) photon emission of WS₂ in a coupled hybrid structure of monolayer WS₂ and InGaN quantum dots (QDs). An interfacially bound exciton, i.e., the coupling between the excitons in WS₂ and the electrons in QDs, has been identified. The emission of this interfacially bound exciton inherits the 0D confinement of QDs as well as the spin-valley physics of excitons in monolayer WS₂. The effective coupling between 2D materials and conventional semiconductors observed in this work provides an effective way to realize the 0D emission of 2D materials and opens the potential of compact on-chip integration of valleytronics and conventional electronics and optoelectronics.

中文翻译：

单层WS ₂和InGaN量子点混合结构的界面界激子态

范德华异质结构通常是使用原子薄的过渡金属二卤化物（TMDC）形成的，具有在近红外到可见光范围内的直接带隙，是低维光电应用的有希望的候选者。二维（2D）层与基板之间或相邻2D层之间的层间相互作用或耦合在通过库仑相互作用或形成层间激子来修饰单个2D材料或器件性能的过程中起着重要作用。在此，我们报道了实现WS的准零维（0D）光子发射的₂单层的耦合混合结构WS ₂个InGaN量子点（QD）。界面结合的激子，即WS中激子之间的耦合₂和QDs中的电子已被识别。这种界面结合的激子的发射继承了QDs的0D限制以及单层WS ₂中激子的自旋谷物理学。在这项工作中观察到的2D材料与常规半导体之间的有效耦合为实现2D材料的0D发射提供了有效的方法，并为Valleytronics与常规电子学和光电子学的紧凑片上集成潜力提供了可能性。

更新日期：2018-08-24

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