Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts,Nano Letters

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Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts
Nano Letters ( IF 9.6 ) Pub Date : 2016-01-25 00:00:00 , DOI: 10.1021/acs.nanolett.5b05071
J. Schöneberg , F. Otte , N. Néel ₁ , A. Weismann , Y. Mokrousov ₂ , J. Kröger ₁ , R. Berndt , S. Heinze

Affiliation

Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin–orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

中文翻译：

单原子接触的弹道各向异性磁阻

各向异性磁阻，即磁性材料在磁化方向上的电阻灵敏度，有望在通过纳米级结的弹道传输中得到极大增强。但是，很难获得这种效果的明确实验证据。我们利用单原子结来测量这种弹道各向异性磁阻（AMR）。单个Co和Ir原子沉积在W（110）上的铁磁Fe层的畴和畴壁上，以控制其磁化方向。它们在低温扫描隧道显微镜中与非磁性探针接触，以测量结电导。由于局部d轨道和非局部d轨道的竞争，从隧穿到弹道状态，磁阻发生了很大的变化，这受自旋-轨道耦合的影响不同。这项工作表明，在单原子水平上对AMR进行工程设计是可行的。

更新日期：2016-01-25

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