Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity,Advanced Materials

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Chemical Growth of 1T‐TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity
Advanced Materials ( IF 27.4 ) Pub Date : 2018-08-01 , DOI: 10.1002/adma.201800074
Xinsheng Wang ₁ , Haining Liu _{1,

2} , Juanxia Wu ₁ , Junhao Lin ₃ , Wen He ₄ , Hui Wang ₄ , Xinghua Shi _{2,

4} , Kazutomo Suenaga ₃ , Liming Xie _{1,

2}

Affiliation

Ultrathin two‐dimensional (2D) charge density wave (CDW) materials, with sharp resistance change at the phase‐transition temperature, yet with ultrathin thickness, hold great potential for electrical device applications. However, chemical synthesis of high‐quality samples and observation of the CDW states down to the monolayer limit is still of great challenge. Chemical vapor deposition of 1T‐TaS₂ sheets on hexagonal boron nitride (h‐BN) with robust CDW states even down to the monolayer extreme is reported here. Further, based on the near commensurate CDW to incommensurate CDW phase transition with a high temperature coefficient of resistance (TCR), highly responsive room‐temperature bolometers are fabricated by suspending the as‐grown 1T‐TaS₂ sheets.

中文翻译：

1T-TaS2单层和薄膜的化学生长：稳健的电荷密度波跃迁和高计量响应

超薄的二维（2D）电荷密度波（CDW）材料在相变温度下具有明显的电阻变化，但厚度却极薄，在电气设备应用中具有巨大的潜力。然而，高质量样品的化学合成和CDW态的观察到单层极限仍然是巨大的挑战。此处报道了1 T- TaS ₂薄板在六方氮化硼（h- BN）上具有稳健的CDW状态的化学气相沉积，甚至直至单层极限。此外，基于具有高电阻温度系数（TCR）的近等CDW至不等CDW相变，通过悬吊已生长的1 T来制造高响应性室温辐射热计‐TaS ₂张。

更新日期：2018-08-01

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